
Allicdata Part #: | MT25QU128ABA8ESF-0AATTR-ND |
Manufacturer Part#: |
MT25QU128ABA8ESF-0AAT TR |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC FLASH 128M SPI 133MHZ 16SOP2 |
More Detail: | FLASH - NOR Memory IC 128Mb (16M x 8) SPI 133MHz ... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | Automotive, AEC-Q100 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NOR |
Memory Size: | 128Mb (16M x 8) |
Clock Frequency: | 133MHz |
Write Cycle Time - Word, Page: | 8ms, 2.8ms |
Memory Interface: | SPI |
Voltage - Supply: | 1.7 V ~ 2 V |
Operating Temperature: | -40°C ~ 105°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 16-SOIC (0.295", 7.50mm Width) |
Supplier Device Package: | 16-SOP2 |
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The MT25QU128ABA8ESF-0AAT TR is a type of memory device that is used in a range of applications. It is a Quad SPI NOR Flash Memory from Micron Technology, which is one of the leading memory manufacturers in the market. This Flash Memory device comes in a small 4x4mm package and offers several features such as high-performance, low-power consumption, reliability, and static random-access memory (SRAM) support.
The MT25QU128ABA8ESF-0AAT TR has several applications and can be used in automotive, consumer electronics, storage, healthcare and medical, industrial, and embedded systems. It is designed for applications that require high endurance and data retention over a wide temperature range and offers fast access time, low power consumption, and fast boot and programming times. This device is also important in providing reliable, secure storage solution for automotive applications.
The working principle of the MT25QU128ABA8ESF-0AAT TR is similar to other NOR Flash Memories and consists of memory cells that store the data. Each memory cell consists of a transistor and a floating-gate capacitor. The transistor acts as a switch and can be used to turn the capacitor on and off. When the transistor is switched on, a current passes through the capacitor, charging it and creating a voltage potential across it. This voltage potential represents the data stored in each memory cell.
The charge retains its value as long as power is maintained. In other words, the data is stored even after a power cycle. The same transistors that charge the memory cells can be used to read the stored data from the capacitors. This is done by applying the correct voltage to the transistor and reading out the current that passes through the capacitor. The memory cells used in the MT25QU128ABA8ESF-0AAT TR are very reliable, which is why this Flash Memory device has a long data retention period and can be used in even harsh environments.
In summary, the MT25QU128ABA8ESF-0AAT TR is a Quad SPI NOR Flash Memory device used in a range of applications, especially in the automotive sector. It offers several features and benefits, such as high-performance, low-power consumption, and data retention over a wide temperature range. The working principle of this Flash Memory device is similar to other NOR Flash Memories and consists of memory cells with transistors and floating-gate capacitors that store the data. The charge in the capacitors retains its value as long as power is maintained, allowing the MT25QU128ABA8ESF-0AAT TR to offer a reliable, secure storage solution for automotive applications.
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