MT25QL512ABB8ESF-0SIT TR Allicdata Electronics
Allicdata Part #:

MT25QL512ABB8ESF-0SITTR-ND

Manufacturer Part#:

MT25QL512ABB8ESF-0SIT TR

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC FLASH 512M SPI 133MHZ 16SOP2
More Detail: FLASH - NOR Memory IC 512Mb (64M x 8) SPI 133MHz ...
DataSheet: MT25QL512ABB8ESF-0SIT TR datasheetMT25QL512ABB8ESF-0SIT TR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 512Mb (64M x 8)
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: 8ms, 2.8ms
Memory Interface: SPI
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 16-SOP2
Description

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Memory: MT25QL512ABB8ESF-0SIT TR Application Field and Working Principle

MT25QL512ABB8ESF-0SIT TR memory is a type of non-volatile memory technology which utilizes an integrated circuit that can store digital data for a very long period of time even when the power is turned off. This type of memory has two major applications – storing static data, like configuration settings or game progress, and storing massive amounts of data, like software. It is also used most often in consumer electronics, automotive applications, health care monitoring, industrial containers, and robotics.

MT25QL512ABB8ESF-0SIT TR memory can store up to 512MB of data per IC. It has an operating temperature range from -40°C (-40°F) to +85°C (+185°F), and is ideal for industrial applications which require high temperatures and shock resistance. The memory also has a low power consumption and is highly reliable with an unlimited endurance and data retention of up to 20 years at 85°C. Additionally, the memory is uniquely identified with a unique serial number and supports the JEDEC industry standard.

When it comes to the working principle of MT25QL512ABB8ESF-0SIT TR memory, the main idea is similar to that of a typical RAM. Basically, the memory is composed of a set of capacitors, transistors and resistors. When a power supply is connected, the transistors start to receive electrical signals or data from the power source which they store in the form of electric charges within the capacitors. These electric charges are then constantly monitored and when the power supply is disconnected, the electric charges remain stored within the capacitors, allowing the memory to maintain its data even without power.

In the case of MT25QL512ABB8ESF-0SIT TR memory, the static RAM or SRAM is used which uses fewer transistors and capacitors so that the charge can be maintained for a longer period of time. The memory can be erased and programmed in-circuit, making it a more convenient and cost-effective solution for commercial applications. Finally, the memory has a read speed of up to 333MHz for faster operation.

MT25QL512ABB8ESF-0SIT TR memory is a reliable and cost-effective form of non-volatile memory technology. It has two major applications – static data storage and massive data storage – making it ideal for many commercial and industrial applications. Furthermore, its low power consumption, high temperatures resistance and shock resistance further makes it a reliable solution for many heat and shock intensive applications.

The specific data is subject to PDF, and the above content is for reference

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