
Allicdata Part #: | MT25QL512ABB8ESF-0SITTR-ND |
Manufacturer Part#: |
MT25QL512ABB8ESF-0SIT TR |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC FLASH 512M SPI 133MHZ 16SOP2 |
More Detail: | FLASH - NOR Memory IC 512Mb (64M x 8) SPI 133MHz ... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NOR |
Memory Size: | 512Mb (64M x 8) |
Clock Frequency: | 133MHz |
Write Cycle Time - Word, Page: | 8ms, 2.8ms |
Memory Interface: | SPI |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 16-SOIC (0.295", 7.50mm Width) |
Supplier Device Package: | 16-SOP2 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Memory: MT25QL512ABB8ESF-0SIT TR Application Field and Working Principle
MT25QL512ABB8ESF-0SIT TR memory is a type of non-volatile memory technology which utilizes an integrated circuit that can store digital data for a very long period of time even when the power is turned off. This type of memory has two major applications – storing static data, like configuration settings or game progress, and storing massive amounts of data, like software. It is also used most often in consumer electronics, automotive applications, health care monitoring, industrial containers, and robotics.
MT25QL512ABB8ESF-0SIT TR memory can store up to 512MB of data per IC. It has an operating temperature range from -40°C (-40°F) to +85°C (+185°F), and is ideal for industrial applications which require high temperatures and shock resistance. The memory also has a low power consumption and is highly reliable with an unlimited endurance and data retention of up to 20 years at 85°C. Additionally, the memory is uniquely identified with a unique serial number and supports the JEDEC industry standard.
When it comes to the working principle of MT25QL512ABB8ESF-0SIT TR memory, the main idea is similar to that of a typical RAM. Basically, the memory is composed of a set of capacitors, transistors and resistors. When a power supply is connected, the transistors start to receive electrical signals or data from the power source which they store in the form of electric charges within the capacitors. These electric charges are then constantly monitored and when the power supply is disconnected, the electric charges remain stored within the capacitors, allowing the memory to maintain its data even without power.
In the case of MT25QL512ABB8ESF-0SIT TR memory, the static RAM or SRAM is used which uses fewer transistors and capacitors so that the charge can be maintained for a longer period of time. The memory can be erased and programmed in-circuit, making it a more convenient and cost-effective solution for commercial applications. Finally, the memory has a read speed of up to 333MHz for faster operation.
MT25QL512ABB8ESF-0SIT TR memory is a reliable and cost-effective form of non-volatile memory technology. It has two major applications – static data storage and massive data storage – making it ideal for many commercial and industrial applications. Furthermore, its low power consumption, high temperatures resistance and shock resistance further makes it a reliable solution for many heat and shock intensive applications.
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Part Number | Manufacturer | Price | Quantity | Description |
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MT25QU512ABB8E12-0SIT TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 512M SPI 133MHZ ... |
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MT25QL512ABB8ESFE01-2SIT TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 512M SPI 133MHZ ... |
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MT25QL256ABA1EW9-0SIT TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 256M SPI 133MHZ ... |
MT25TL256HBA8ESF-0AAT TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 256M SPI 133MHZ ... |
MT25QL128ABB8ESF-0AUT | Micron Techn... | 0.0 $ | 1000 | IC FLASH 128M SPI 133MHZ ... |
MT25QU512ABB8E12-0SIT | Micron Techn... | -- | 2000 | IC FLASH 512M SPI 133MHZ ... |
MT25QL128ABA8E12-0AAT | Micron Techn... | 0.0 $ | 72 | IC FLASH 128M SPI 24TPBGA... |
MT25QU256ABA8E14-1SIT | Micron Techn... | 0.0 $ | 1000 | IC FLASH 256M SPI 24TPBGA... |
MT25QU128ABA1EW9-0SIT TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 128M SPI 133MHZ ... |
MT25QU128ABA1ESE-0SIT TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 128M SPI 133MHZ ... |
MT25QU128ABA8E12-1SIT TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 128M SPI 133MHZ ... |
MT25QL02GCBA8E12-0SI | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2G SPI 133MHZ 24... |
MT25TL01GHBB8E12-0AAT TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 1G SPI 133MHZ 24... |
MT25TL01GHBB8E12-0AAT | Micron Techn... | 0.0 $ | 1000 | IC FLASH 1G SPI 133MHZ 24... |
MT25QU512ABB8ESF-0SIT | Micron Techn... | -- | 227 | IC FLASH 512M SPI 133MHZ ... |
MT25QU128ABA8E12-0SIT TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 128M SPI 133MHZ ... |
MT25QL01GBBB8E12-0SIT TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 1G SPI 133MHZ 24... |
MT25QL512ABB8ESF-0SIT TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 512M SPI 133MHZ ... |
MT25QL01GBBB8ESF-0AAT | Micron Techn... | 0.0 $ | 1000 | IC FLASH 1G SPI 133MHZ 16... |
MT25QL128ABB8ESF-0AUT TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 128M SPI 133MHZ ... |
MT25TL512HBA8ESF-0AAT TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 512M SPI 133MHZ ... |
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MT25QU128ABA1EW7-MSIT TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 128M SPI 133MHZ ... |
MT25QL01GBBB8E12E01-2SIT | Micron Techn... | 0.0 $ | 1000 | IC FLASH 1G SPI 133MHZ 24... |
MT25QL128ABB1EW7-CSIT | Micron Techn... | 0.0 $ | 1000 | IC FLASH 128M SPI 133MHZ ... |
MT25QL01GBBA8E12-0SIT TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 1G SPI 133MHZ 24... |
MT25QL256ABA8ESF-MSIT | Micron Techn... | 0.0 $ | 1000 | IC FLASH 256M SPI 133MHZ ... |
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MT25QL256ABA8ESF-0AAT TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 256M SPI 133MHZ ... |
MT25QL256ABA8E12-1SIT | Micron Techn... | -- | 175 | IC FLASH 256M SPI 24TPBGA... |
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