MT28EW128ABA1HPC-0SIT

The MT28EW128ABA1HPC-0SIT is a powerful integrated semiconductor device with a range of versatile features. It is a 128Mbit (16Mx8bit) flash memory manufactured by Micron Technology which utilizes its advanced NAND-type flash memory technology. It offers high density storage, high performance, and a high degree of reliability. The device is rectangular, measuring 2.64mm x 1.33mm.

The device is ideally suited to applications such as those found in the latest mobile phones, digital cameras, MP3 players and other portable data storage devices. It is also used in automotive, medical, industrial, and consumer applications.

Memory Type

The MT28EW128ABA1HPC-0SIT is a NAND Flash Memory device. In NAND Flash Memory, the arrangement of transistors is reminiscent of wires, which are divided into segments. This arrangement allows data to be written and erased more quickly than with NOR Flash Memory. The MT28EW128ABA1HPC-0SIT is single-level cell (SLC) type, allowing for high-speed read and write cycles by shifting data between cells.

Types of Packaging

The MT28EW128ABA1HPC-0SIT is available in several types of packages, including: Wafer Level Chip (WLCSP), Chip-On-Board (COB), and TSOP-II/FBGA. The WLCSP package is the smallest form factor, followed by the COB, and then the TSOP-II/FBGA package.

Features and Benefits

• Multi-level cell (MLC) technology: The MT28EW128ABA1HPC-0SIT has a MLC type design, which allows for faster writing and erasing of data.
• Low-power consumption: The device can operate at up to 1.8V, allowing for lower energy consumption and longer battery life in portable devices.
• Improved endurance: The device offers up to 70,000 program and erase cycles, making it highly reliable.
• Fast erase time: The device can erase a single sector in less than a tenth of a millisecond.
• High-density storage: The device is capable of storing up to 128Mbit of data, allowing for large amounts of data storage in a small device.

Working Principle

The MT28EW128ABA1HPC-0SIT utilizes an advanced Cell Architecture, which is designed to improve the performance and reduce the energy consumption of the device. The Cell Architecture is based on an Array + Cache concept, with each Array + Cache combination containing multiple cells. The Array + Cache concept allows for faster writing and erasing of data, as well as lower power consumption, due to the reduced number of transistors used in each cell.

In order to write or erase data, the device utilizes a erase gate, which is driven by an externally provided erase voltage. Once the erase voltage is applied, electrons are removed from the cell, allowing the data to be rewritten. In order to read data, the device utilizes a read gate, which amplifies the voltage within the cell, allowing the data to be read.

The MT28EW128ABA1HPC-0SIT has been designed to operate at up to 1.8V, allowing for lower energy consumption and longer battery life in portable devices. The device also features a built-in on-board hardware Data Protection System, which prevents accidental erasure of data. Additionally, the device is protected against electrostatic discharge (ESD), which is essential for environments with fluctuating levels of electrostatic activity.

Conclusion

The MT28EW128ABA1HPC-0SIT is a powerful integrated semiconductor device which features a high-density NAND Flash Memory architecture. It is ideally suited for applications such as mobile phones, digital cameras, MP3 players and other portable data storage devices, due to its high density storage, fast erase time, and improved endurance. It is available in several types of packages, including Wafer Level Chip (WLCSP), Chip-On-Board (COB), and TSOP-II/FBGA. The device utilizes an advanced Cell Architecture which utilizes an Array + Cache concept in order to improve the performance and reduce the energy consumption of the device.