Allicdata Part #: | MT28F008B3VG-9TETTR-ND |
Manufacturer Part#: |
MT28F008B3VG-9 TET TR |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC FLASH 8M PARALLEL 40TSOP I |
More Detail: | FLASH - NOR Memory IC 8Mb (1M x 8) Parallel 90ns ... |
DataSheet: | MT28F008B3VG-9 TET TR Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NOR |
Memory Size: | 8Mb (1M x 8) |
Write Cycle Time - Word, Page: | 90ns |
Access Time: | 90ns |
Memory Interface: | Parallel |
Voltage - Supply: | 3 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 40-TFSOP (0.724", 18.40mm Width) |
Supplier Device Package: | 40-TSOP I |
Base Part Number: | MT28F008B3 |
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MT28F008B3VG-9 TET TR is a category of memories. It is a Non-Volatile Flash Memory, or a NAND Flash Memory. NAND Flash Memory is a fast, economical way to store large amounts of data without the use of traditional hard drives. Because of its relatively low cost and fast interface, NAND Flash Memory has become one of the most popular types of memory in a wide range of applications, ranging from consumer electronics to automotive applications.
The MT28F008B3VG-9 TET TR is a NAND Flash Memory device and is composed of an array of memory cells, each consisting of a floating gate which is the storage node for the contents of the cell. Each memory cell has a unique address, which can be written to or read from.
A NAND Flash Memory device also contains control circuitry that manages data storage and retrieval. The control circuitry consists of a controller, an I/O port, an address port, and other necessary control circuitry. The controller is responsible for maintaining control over the NAND Flash Memory device’s operations and is the interface between the CPU and the NAND Flash Memory device. The controller also contains programming logic which allows the device to perform various operations including writing and reading data.
The MT28F008B3VG-9 TET TR NAND Flash Memory device also includes a built-in write-cyclic error correction system which allows for data to be written to the cells more accurately and reliably than would be possible with a non-write-cyclic system. This system uses an error-correction algorithm which is designed to detect and correct any write errors that may occur while writing data to the memory device.
The MT28F008B3VG-9 TET TR NAND Flash Memory has a wide array of applications. Some of these applications include storing image and video data, as well as audio and data files. NAND Flash Memory can also be used to store music, movies, and other multimedia content. In addition, some automotive, industrial, and medical applications use NAND Flash Memory to store data and programs.
The MT28F008B3VG-9 TET TR NAND Flash Memory device is also widely used in consumer electronics. It is found in digital cameras, MP3 players, smartphones, and portable media players, among other products. In these types of devices, the NAND Flash Memory is used to store large amounts of data and programs, such as music, videos, and photos.
NAND Flash Memory is a reliable and cost-effective storage solution for many applications. Its high write and read speeds, as well its low power consumption and small size make it a popular choice for many types of memory applications. Its low cost and fast interface also make it a popular choice in a wide range of consumer, automotive, industrial, and medical applications.
The specific data is subject to PDF, and the above content is for reference
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MT28F008B3VG-9 BET | Micron Techn... | 0.0 $ | 1000 | IC FLASH 8M PARALLEL 40TS... |
MT28F008B3VG-9 BET TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 8M PARALLEL 40TS... |
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