MT28F008B5VG-8 T

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Memory: MT28F008B5VG-8 T Application Field and Working Principle

MT28F008B5VG-8 T is a non-volatile memory device from the family of NOR Flash by Micron Technology, the world-leading manufacturer of semiconductors and DRAM products. It is a so-called Parallel NOR Flash that stores data in the form of memory cells made of floating-gate transistors.

Device Overview

The device comprises of 2,816,128 bytes or 1.75MB of storage which can be split up into two 1MB partitions. It provides a decent amount of storage for many embedded applications where a large amount of data needs to be stored, such as in industrial automation, medical and automotive systems. The MT28F008B5VG-8 T has a 4KB sector architecture which allows the device to be protected in areas where security is of the utmost importance.

The device also offers a fast random read operation at 120ns yet requires a relatively long programming time of 99µs. Its power consumption characteristics are quite low, requiring only a single 3.3V voltage supply during normal operation. The MT28F008B5VG-8 T also benefits in terms of stability and durability with its use of a dielectric isolation layer between the two separate memories.

Operating Modes

The MT28F008B5VG-8 T has three different operating modes: Read, Program, and Erase. In the Read mode, data stored in the memory can be accessed at random. In the Program mode, new data can be written to the memory. Lastly, in the Erase mode, data stored in the memory can be completely erased.

Programming and Erasing

Data is programmed into the memory cell of the MT28F008B5VG-8 T by applying voltages to the NAND gate. The transistor used in the MT28F008B5VG-8 T is the floating-gate MOSFET, which allows for the transistor to be programmed and erased multiple times. Programming is done by applying a voltage of 12V to the NAND gate. This voltage causes the electrons in the floating-gate of the transistor to accumulate, producing a higher current path between the source and drain.

Erasing is accomplished by applying a voltage of 2V to the NAND gate. This voltage causes a depletion of the electrons from the floating-gate of the transistor, thus reducing the current path between the source and drain.

Applications

The MT28F008B5VG-8 T is used in various applications such as automotive systems, industrial automation, medical equipment and consumer electronics. It can be used as a stand-alone memory for small applications or as an auxiliary memory for larger ones, providing a large capacity for data storage and fast read access. Additionally, its low power consumption, stable operation, and security features make the MT28F008B5VG-8 T an ideal choice for embedded applications.

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