MT28F320J3RG-11 ET TR Integrated Circuits (ICs) |
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Allicdata Part #: | 557-1003-2-ND |
Manufacturer Part#: |
MT28F320J3RG-11 ET TR |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC FLASH 32M PARALLEL 56TSOP I |
More Detail: | FLASH Memory IC 32Mb (4M x 8, 2M x 16) Parallel 1... |
DataSheet: | MT28F320J3RG-11 ET TR Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH |
Memory Size: | 32Mb (4M x 8, 2M x 16) |
Write Cycle Time - Word, Page: | -- |
Access Time: | 110ns |
Memory Interface: | Parallel |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 56-TFSOP (0.724", 18.40mm Width) |
Supplier Device Package: | 56-TSOP I |
Base Part Number: | MT28F320J3 |
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Memory is an important part of a computer system. It is used to store both data and instructions. The MT28F320J3RG-11 ET TR is a Memory device that is used in many applications. This article will discuss the application field and working principle of this device.
The MT28F320J3RG-11 ET TR is a type of flash memory. Flash memory is a type of non-volatile memory that is used in many applications such as storage of data in digital cameras, cell phones, mp3 players, portable devices and embedded systems. The MT28F320J3RG-11 ET TR is a EEPROM device with a spare NAND-based cell block. It has an FRAM-based cell block with control logic and a header block.
The MT28F320J3RG-11 ET TR is an ideal solution for applications requiring high reliability and performance such as automotive and industrial applications. Its NAND-based cell block has been engineered to reduce wear out and to improve endurance. The MT28F320J3RG-11 ET TR also offers high speed performance due to its low voltage operation and fast random write cycle time.
The MT28F320J3RG-11 ET TR has a working principle which makes it suitable for use in a variety of applications. Its EEPROM technology enables it to store data in its cells without the need to use any additional circuitry. It also has an FRAM-based cell block which allows for fast random access to data stored in its memory cells. The FRAM-based cell block is also capable of retaining data for up to 10 years when power is switched off. The device also has a header block which contains control information for the system.
The MT28F320J3RG-11 ET TR is a reliable and durable memory device that can be used in a variety of applications. Its EEPROM and FRAM-based cell blocks enable it to store and retain data for up to 10 years while its header block also allows for control of the system. This makes it ideal for applications that require high reliability and performance such as automotive and industrial applications.
The specific data is subject to PDF, and the above content is for reference
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