MT28F004B3VG-8 TET

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The MT28F004B3VG-8 TET is a high-performance and cost-effective, non-volatile, 4Mbit memory device that utilizes floating-gate technology, making it suitable for a wide range of consumer and automotive applications. It offers a number of advantages including, but not limited to, high-density integration (4Mbit), high-reliability and low-power. The memory device is perfect for applications that require relatively large amounts of data to be stored and accessed quickly as it has a random-access time of 70ns.

The MT28F004B3VG-8 TET is a dual inline memory module (DIMM) that features a DDR3-1866-X8 interface, making it suitable for use in embedded applications and consumer electronics designs. Its package type is a FBGA (Fine Pitch Ball Grid Array) with a 2mm balls pitch and an 8mmx14mm outline. The memory device has a voltage operational range of 2.7-3.6V and supports a wide temperature range of -45⁰C to 125⁰C.

The MT28F004B3VG-8 TET can be used in variety of ways and is mainly used in automotive control and simulation, security systems, industrial control systems and digital media players. In each application, the memory device can be used to store a range of data including, but not limited to, images and audio tracks. To facilitate use, the module can withstand up to 200000 write cycles and has an endurance of 100000 erase/program cycles per byte.

The working principle of the memory module is rooted in Flash memory technology. It utilizes a floating gate device made from silicon material p-n junction. When the electrons are injected into the floating gate device, an opposite electric field is formed and this leads to an avalanche breakdown. As electrons flow through the p-n junction, they hit the floating gate and this causes the electric field to be read as a logic state of ‘1’ or ‘0’.

The MT28F004B3VG-8 TET employs an array of cells in which the electrons are injected for storage of information. The cells are organized into blocks, each block containing 32 cells, allowing for 4Mbits of data to be stored. The memory module also includes embedded hardware ECC (Error Correction Code) logic that can detect and correct single-bit errors and detect double-bit errors that require Rewrite or Read commands.

The MT28F004B3VG-8 TET features a powerful software command set that enables control of the memory module as well as modification of its settings. It also offers OTP (One Time Programming) support that allows the memory device to be reprogrammed once during the assembly of the device. The command set consists of the following types of command: Read mode, Write mode, Erase mode, Program check and Sleep mode.

In conclusion, the MT28F004B3VG-8 TET is a perfect memory device for a wide range of applications due to its high-density integration, high-reliability and low-power. It also offers a powerful software command set for control, making it an ideal choice for automotive and embedded applications. Furthermore, its random-access time of 70ns makes the memory device suitable for applications that require large amounts of data to be stored and accessed quickly and efficiently.

The specific data is subject to PDF, and the above content is for reference