MT28F800B3SG-9 T Allicdata Electronics
Allicdata Part #:

MT28F800B3SG-9T-ND

Manufacturer Part#:

MT28F800B3SG-9 T

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC FLASH 8M PARALLEL 44SOP
More Detail: FLASH - NOR Memory IC 8Mb (1M x 8, 512K x 16) Para...
DataSheet: MT28F800B3SG-9 T datasheetMT28F800B3SG-9 T Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 8Mb (1M x 8, 512K x 16)
Write Cycle Time - Word, Page: 90ns
Access Time: 90ns
Memory Interface: Parallel
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-SOIC (0.496", 12.60mm Width)
Supplier Device Package: 44-SOP
Base Part Number: MT28F800B3
Description

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The MT28F800B3SG-9 T is classified as an important category of technology known as Memory. In this article, the application field and working principle of the MT28F800B3SG-9 T will be discussed.

Application Field

The MT28F800B3SG-9 T is applicable in various fields, including common industrial and consumer electronics, as well as medical, automotive, telecommunications and aerospace electronics. As a type of solution-oriented memory, it is used to enhance the performance of tech products, making them more efficient and reliable.

In the industrial world, the MT28F800B3SG-9 T is commonly used in factory automation systems, process control, and machine vision applications. In medical applications, the memory is often used in medical imaging, medical diagnostics, and monitoring systems. The memory is also applicable in aerospace applications, such as embedded avionics systems used in aircraft, missiles, and space exploration. In automotive applications, the memory is used for engine control, safety systems, and communications.

Working Principle

The MT28F800B3SG-9 T is a NOR Flash Memory, which consists of an Array of 128K flash memory cells. Each cell is comprised of two memory transistors and a programming transistor. Using NOR architecture, the memory transistors are connected with the ground and the control line, forming a series connection. By applying appropriate voltage to the control line and the transistors, the state of these transistors is changed. This causes the programming transistor to conduct, writing the data in the selected cells.

The memory is based on an NAND architecture, where the memory transistors are inverters which write the data in the transistors based on the voltage applied to them. By applying a larger voltage to the control line, the memory transistors’ state is changed, causing the programming transistor to conduct and writing the data in the selected cells.

In addition, the MT28F800B3SG-9 T uses a multi-layer cell structure, featuring a floating gate layer between the memory transistors and the programming transistor. This layer stores the data and prevents leakage, ensuring that the data is retained even when power is removed. This makes the MT28F800B3SG-9 T perfect for applications where data retention is essential, such as in medical applications, aerospace applications, and automotive applications.

The MT28F800B3SG-9 T also offers several other features that make it perfect for these applications. For example, it supports read/write speeds of up to 140Mb/s, and its lower power consumption helps extend battery life. Additionally, its advanced error detection and correction ensures correct data processing and enhanced reliability.

Conclusion

The MT28F800B3SG-9 T is a type of memory that is applicable in various fields, including industrial, automotive, medical, and aerospace electronics. Its NOR Flash Memory architecture, multi-layer cell structure, and advanced features such as read/write speeds and advanced error detection allow it to deliver high performance and reliability. Thus, the MT28F800B3SG-9 T is an ideal choice for a wide range of memory applications.

The specific data is subject to PDF, and the above content is for reference

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