MT28EW256ABA1HJS-0SIT TR

Introduction to MT28EW256ABA1HJS-0SIT TR Memory

MT28EW256ABA1HJS-0SIT TR is a non-volatile memory device manufactured by Macronix International Co., Ltd. The device consists of an advanced 3D NAND die stacked on a SLC-type die and is the first device that offers the best of both products in terms of performance and reliability. The device is available in packages of 8-pin SOIC and 8-ball BGA packages.

Application Field of MT28EW256ABA1HJS-0SIT TR Memory

The MT28EW256ABA1HJS-0SIT TR Memory is suitable for a wide range of applications such as automotive, IoT, industrial and consumer. This device is particularly suitable for applications requiring low power consumption, small size, low cost and high reliability. This memory device can be used in automotive applications that benefit from the combination of its low power and high reliability. The device is used in a variety of mission-critical and cost-sensitive applications including automotive infotainment systems, motor controllers, embedded control modules, HMI controllers and more.

The device is also suitable for use in various Industrial and consumer applications. The device is used in industrial control systems for automation and for industrial safety due to its superior reliability and low power consumption. The device is also suitable for consumer applications such as consumer portable devices, wearable devices and general consumer electronics.

Working Principle of MT28EW256ABA1HJS-0SIT TR Memory

The MT28EW256ABA1HJS-0SIT TR Memory is based on Macronix’s first-generation 3D NAND structure. It has a Single Level Cell (SLC) architecture with 8 planes of memory cells. Each plane consists of 4 blocks, each composed of 256 pages with 4 bits per cell. The device supports 20nm process technology.

The device incorporates advanced wear-leveling and bad block management features to ensure a high degree of reliability and endurance. The device supports an Advanced I/O (AIO) technology that enables parallel and serial reading and writing operations at much faster speeds than conventional NAND memory devices. The device also supports advanced security measures such as AES encryption to protect data stored on the device.

The device also supports the open NAND Flash Interface (ONFI) that enables compatibility and interoperability between host systems. The device also supports multiple operation sequences such as read, program, erase and reset to provide greater flexibility. The device has a high degree of reliability due to its high cell-to-cell isolation, advanced error correction and advanced data protection measures.

Conclusion

The MT28EW256ABA1HJS-0SIT TR Memory is a highly reliable memory device suitable for a wide range of applications. The device is based on Macronix’s first-generation 3D NAND architecture and supports advanced security, wear-leveling and error-correction features to ensure the highest level of reliability. The device is suitable for a range of applications from automotive, industrial and consumer.