MT28F004B5VG-8 TET TR

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MT28F004B5VG-8 TET TR is a low power, 3.2 V operation, 4M-bit (512 K x 8) Flash memory that is ideal for a variety of non-volatile data storage applications. The device is packaged in a 48-pin TSOPII (8 x 20 mm) and a 64-pin VFBGA (8 x 8 mm). MT28F004B5VG-8 TET TR is related to Memory.A Flash memory is a non-volatile semiconductor memory device that can be electrically erased and reprogrammed. This type of memory technology is effective in allowing users to access data without relying on power and also to re-programming non-volatile memory as needed. Flash memory can also be referred to as NOR type memory, as opposed to NAND memory, which is a more current type of memory used in flash drives and other types of storage technology. Flash memory is typically better for applications that require quick access to small data such as boot memories and system settings, as those types of applications require frequent reprogramming and quick access times.The Flash memory used in MT28F004B5VG-8 TET TR is called Embedded TMRAM, One-Time Programmable Non Volatile Memory (NROM). NROM technology has been developed to replace existing EEPROM and EPROM, offering applications with a cost-effective and low power storage solution. This type of technology enables applications to be non-volatile and reprogrammable, providing write/erase of code and data in a single power plane with strong EMI immunity.The working principle of MT28F004B5VG-8 TET TR is based on NROM technology. NROM uses a one-time programming mechanism which allows programming to be done once and after that, cannot be reversed. In order to program NROM cells, two transistors are combined and two different charge storages are used, one of which is the Floating Gate (FG) and the other being the Source (SR). The charge on the FG is used to control the threshold voltage of the Source, which controls whether the cell is ON state or OFF state.The MT28F004B5VG-8 TET TR provides applications with a high-density memory storage solution, enabling the design to have a minimum of power consumption and low cost. Its features include self-programmable and/or software-controlled operation, error correction, battery backup for data storage, erasing and programming time of less than 15ms, random access and word-wide addressing (4M-bit). This technology enables data to be stored in the flash memory with enhanced reliability even in harsh environmental conditions.Moreover, the MT28F004B5VG-8 TET TR is applicable to wide range of application fields such as consumer electronics, automotive applications, smart cards, white goods and industrial control. This technology offers flexible data storage in areas such as automotive, consumer, industrial and medical. It offers a reliable storage solution for a wide range of applications such as data logging, embedded systems, data security and system configuration.In conclusion, MT28F004B5VG-8 TET TR is a low power, 4M-bit (512 K x 8) Flash memory used for a variety of non-volatile data storage applications. This memory technology is based on NROM technology, which allows programming to be done once and after that, cannot be reverse. It offers flexible data storage across multiple application fields such as consumer electronics, automotive, industrial and medical, with ability to store data reliably in harsh environmental conditions.

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