MT28EW01GABA1HPC-0AAT TR

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NAND Flash memory is a type of non-volatile storage technology that does not require power to retain data. The MT28EW01GABA1HPC-0AAT TR is a NAND flash memory device specifically developed by the multinational semiconductor and telecommunications equipment corporation, Micron Technology Inc. This memory device is characterized by small size, large capacity, fast read-write speed, high reliability and other features, which makes it widely used in many applications, such as digital cameras, personal digital assistants (PDAs), portable media players, mobile phones, USB flash drives and other embedded systems.

The MT28EW01GABA1HPC-0AAT TR is a multi-level cell (MLC) 512 megabit (Mb) NAND Flash memory device, built on Micron\'s proprietary 34-nanometer floating gate architecture. This design makes use of MirrorBit technology, which allows for a higher number of bits per memory cell, allowing for increased cell density. Its floating gate transistor cells are organized into 96 pages (128K bits) per block, and a total of up to 8192 corresponding blocks.

The MT28EW01GABA1HPC-0AAT TR provides an efficient feature set, including Flexible Page Operation, Security Programming, Hardware Write Protect and Program Suspend, which makes it an ideal choice for a number of low-power embedded applications. It also supports both synchronous and asynchronous operation, which helps to optimize the memory performance according to the system requirements. It also enables the device to support a wide range of data transfer rates, making it suitable to be integrated with most existing digital systems.

The MT28EW01GABA1HPC-0AAT TR memory device works over a wide temperature range (−40°C to +85°C) and can sustain up to 20,000 program erase cycles per block. In addition to that, it is also designed with sleep state support for low power consumption. The device also supports Error Correction Code (ECC) feature, which detects and corrects errors that may arise due to certain types of hardware or programming defects.

In summary, the MT28EW01GABA1HPC-0AAT TR NAND flash memory is a device that combines a number of features such as small size, quick read-write speed, large capacity and high reliability to provide efficient solutions for a wide range of applications. Its support for synchronous and asynchronous operations, along with its smart power consumption, makes it a useful choice for embedded systems and other digital devices.

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