MT28EW01GABA1LJS-0AAT TR Allicdata Electronics
Allicdata Part #:

MT28EW01GABA1LJS-0AATTR-ND

Manufacturer Part#:

MT28EW01GABA1LJS-0AAT TR

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC FLASH 1G PARALLEL 56TSOP
More Detail: FLASH - NOR Memory IC 1Gb (128M x 8, 64M x 16) Par...
DataSheet: MT28EW01GABA1LJS-0AAT TR datasheetMT28EW01GABA1LJS-0AAT TR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: Automotive, AEC-Q100
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 1Gb (128M x 8, 64M x 16)
Write Cycle Time - Word, Page: 60ns
Access Time: 105ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 56-TSOP (14x20)
Description

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Memory plays an indispensable role in computers. MT28EW01GABA1LJS-0AAT is a kind of memory that utilises various features such as low power, low cost and wide temperature range. It applies to a wide range of fields from automotive, industrial, medical and consumer applications.

MT28EW01GABA1LJS-0AAT is a Serial NOR Flash which uses a serial interface to allow a system to read and write data to the memory. It is typically used in embedded system applications, such as automotive dashboard computers or in-vehicle infotainment systems. It acts as a data repository for code and data in the system and provides rapid data access when called upon.

The working principle of MT28EW01GABA1LJS-0AAT with serial NOR Flash is quite simple. It is an integrated circuit composed of an array of non-volatile memory cells. The operation of these cells is based on the principle of storing data in the form of electric charge. When a voltage is applied to the memory cell, a current is injected, forming a charge which is maintained even if the voltage is removed. This stored charge can be read by sensing the current flowing through the cell.

Data can be written to these cells, either by means of injecting a charge into the cell or by using Fowler-Nordheim tunneling in which an electric field is used to inject the charge. Data can be read from the memory cells by sensing the current through a sense amp. This allows for rapid read and write operations when compared to traditional Flash or EEPROM memory.

In addition to its low power consumption, MT28EW01GABA1LJS-0AAT also offers a wide temperature range from -40°C to 85°C and supports AES-128 encryption and 64-bit Unique ID that ensures registered data protection. This makes it ideal for applications in extreme temperature environments and where sensitive data is to be secured.

The MT28EW01GABA1LJS-0AAT serial NOR Flash provides a range of higher performance and reliability features, the low cost and wide temperature range make it an ideal choice for a variety of applications including automotive, industrial, medical and consumer applications.

The specific data is subject to PDF, and the above content is for reference

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