Allicdata Part #: | MT28EW256ABA1HJS-0SIT-ND |
Manufacturer Part#: |
MT28EW256ABA1HJS-0SIT |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC FLASH 256M PARALLEL 56TSOP |
More Detail: | FLASH - NOR Memory IC 256Mb (32M x 8, 16M x 16) Pa... |
DataSheet: | MT28EW256ABA1HJS-0SIT Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NOR |
Memory Size: | 256Mb (32M x 8, 16M x 16) |
Write Cycle Time - Word, Page: | 60ns |
Access Time: | 75ns |
Memory Interface: | Parallel |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 56-TFSOP (0.724", 18.40mm Width) |
Supplier Device Package: | 56-TSOP (14x20) |
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Memory technology is an essential part of the world today. It forms the core of many modern technologies from computers, smartphones, consumer electronics, and even potentially AI-enabled systems. As such, its continued development and advancement is essential for the success of these technologies. One type of memory technology is the MT28EW256ABA1HJS-0SIT. In this article, we will explore the application field and working principle of this type of memory.
Application Field
MT28EW256ABA1HJS-0SIT is often used in industrial and consumer applications. Its main advantage is its exceptional performance and reliability, making it a great choice in high-end applications. It is often used in industrial and embedded systems, as it is capable of operating with very low power consumption even under extreme temperatures. It is also used in automotive and consumer electronics, as its performance and reliability are essential for the reliable operation of these devices.
Working Principle
MT28EW256ABA1HJS-0SIT memory works on a “read-write” operation principle. As the name suggests, it is capable of both reading and writing data. Special circuitry is used to control the reading and writing of data. This circuitry is designed to ensure that the data is read and written correctly, and is also capable of protecting the data from being corrupted or lost. The memory is organized in pages and blocks, which allows for efficient address assignment. Each data bit is stored on a well-organised storage cell. This storage cell is essentially a form of flash memory, which allows it to be updated without the need to fully rewrite the data.
MT28EW256ABA1HJS-0SIT operates in two modes: serial and parallel modes. In serial mode, data is written and read from one address location at a time. In parallel mode, multiple parallel operations can be performed at once; this allows for faster access to data. This type of memory is also fault tolerant, allowing for continued operation even if errors occur in the system.
In conclusion, MT28EW256ABA1HJS-0SIT memory is a powerful and reliable memory technology, which is used in many different applications. Its read-write principle, fault tolerant operation and low power consumption allows it to be a great choice in applications where performance and reliability are essential.
The specific data is subject to PDF, and the above content is for reference
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MT28F004B5VG-8 T TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4M PARALLEL 40TS... |
MT28F004B5VG-8 TET | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4M PARALLEL 40TS... |
MT28F004B5VG-8 TET TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4M PARALLEL 40TS... |
MT28F004B5VP-8 T | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4M PARALLEL 40TS... |
MT28F004B5VP-8 T TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4M PARALLEL 40TS... |
MT28F008B3VG-9 B | Micron Techn... | -- | 1000 | IC FLASH 8M PARALLEL 40TS... |
MT28F008B3VG-9 B TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 8M PARALLEL 40TS... |
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MT28F008B3VG-9 BET TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 8M PARALLEL 40TS... |
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MT28F008B3VG-9 T TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 8M PARALLEL 40TS... |
MT28F008B3VG-9 TET | Micron Techn... | 0.0 $ | 1000 | IC FLASH 8M PARALLEL 40TS... |
MT28F008B3VG-9 TET TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 8M PARALLEL 40TS... |
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MT28F008B3VP-9 B TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 8M PARALLEL 40TS... |
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MT28F008B5VG-8 BET | Micron Techn... | 0.0 $ | 1000 | IC FLASH 8M PARALLEL 40TS... |
MT28F008B5VG-8 BET TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 8M PARALLEL 40TS... |
MT28F008B5VG-8 T | Micron Techn... | 0.0 $ | 1000 | IC FLASH 8M PARALLEL 40TS... |
MT28F008B5VG-8 T TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 8M PARALLEL 40TS... |
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