MT28F128J3FS-12 MET

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MT28F128J3FS-12 MET is a type of memory, which provides a high density that is fit for code storage or execution in embedded applications. The package uses a 16-bit parallel bus with a capacity of 128 megabytes (1 Kbyte = 1,024 bytes) and is a cost-effective and reliable solution for maximum applications. This memory is based on flash memory technology, which can be easily erased and programmed, eliminating the need for an external erase and programming system.

MT28F128J3FS-12 MET can be used in the automotive, consumer, industrial automation, wired communications, machine-to-machine (M2M), and medical markets. It is well suited for very low power applications that require code execution, and is highly reliable with a mean time before failure (MTBF) greater than 10 years under normal conditions.

As a memory, MT28F128J3FS-12 MET is designed as a parallel NOR Flash in a small 64-ball (9x9 mm) BGA package. It offers a high-performance, highly reliable and cost-effective storage solution for code storage or execution in embedded applications. It contains not only flash memory but also a controller, SRAM and a high-speed bus interface to enable an optimized system performance. Furthermore, it can be combined with SLC NAND Flash memory, DDR memory, and other nonvolatile memory to provide a single embedded system solution.

In order to operate, the MT28F128J3FS-12 MET must be connected to the system board in order to supply power and data access. The controller blocks the write operations when the power is offline, therefore allowing for cutting current when it\'s not in use, resulting in a lower power consumption. The controller is capable of programming both the number and the direction of the write operations, allowing for customized applications. It also supports a high-speed data transfer rate, up to 133 MHz.

In addition, the MT28F128J3FS-12 MET has a Low Power CPS (LPC) architecture, which supports the low-power dynamic read and write operations. This design allows the system to remain in standby mode during the data programming and erase operations. The average programming or erase time is in the region of 5 milliseconds, meaning that it can be used for fast system operations.

The MT28F128J3FS-12 MET is also designed for ECC (Error Correction Code) support and hardware data safety, with NAND/NOR specific ECC protection covering up to 8 bits. It is capable of self-programming only after successful verification that the code is correct, thus guaranteeing reliable code execution. The package also allows the user to erase or program the memory blocks individually according to their needs.

In terms of environmental conditions, the MT28F128J3FS-12 MET is designed to withstand temperatures between -40°C and 85°C. Furthermore, it is designed to withstand high levels of vibration and shock, which makes it well suited for a wide range of applications. Lastly, the package sizes are available in different sizes, including 54-ball (7x7 mm), 64-ball (9x9 mm), and even 100-ball (13x13 mm) with a wide range of densities.

In conclusion, the MT28F128J3FS-12 MET is a highly reliable and energy efficient memory solution for embedded applications. It combines a flash memory, a controller, and a high-performance and high-speed bus interface in a small package, making it cost-effective and suitable for a wide range of applications. The ECC support and hardware data safety guarantees reliable code execution, while the small form factor allows for easy integration into any system.

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