MT28F800B5WG-8 TET

Memory - MT28F800B5WG-8 TET Application Field and Working Principle

Memory chip solutions are an integral part of modern electronic systems. The MT28F800B5WG-8 TET is a type of embedded Flash Memory Chip designed for applications that require a high level of performance and cost-efficiency. This article looks at the application of the MT28F800B5WG-8 TET Memory Chip and how it works.

Device Overview

The MT28F800B5WG-8 TET Memory Chip belongs to Micron\'s Traveo™ family of Flash memory solutions. It is a "SuperFlash" chip with a size of 8 megabytes (Mb) and total erase time of 10 microseconds. This chip is built upon Micron\'s latest technology and is intended for automotive, consumer and industrial microcontroller applications.

Niches for the MT28F800B5WG-8 TET Memory Chip include applications where quick, efficient erase times and large storage size are needed. This particular chip is intended for small microcontrollers with on-chip Flash memory and is suited for applications that require error correction, security, and wear-leveling for improved performance and data integrity.

Features and Performance

The MT28F800B5WG-8 TET Memory Chip offers many features that make it an ideal solution for embedded applications. It utilizes embedded write-protection, erase-suspend/resume commands, and offers flexible interface options, making it possible to use in both single-bit and multi-bit architectures. The multi-bit architecture can result in faster read and write speeds.

The chip offers a random read speed of 25MHz and random write of 5MHz. There is an endurance of 2 million program/erase cycles and data retention of 10 years. The MT28F800B5WG-8 TET Memory Chip includes built-in "early warning" ECC (error correction code) capabilities that allow the host system to fix single and double-bit errors in real time, making data transfer more reliable.

In addition, the chip is designed to take advantage of Micron\'s reduced-power VPP (VPP is Voltage-Programming Power) architecture to reduce device power at typical operating voltages. This feature significantly reduces power consumption, making this an ideal device for battery-powered and energy-sensitive applications.

Working Principle

The MT28F800B5WG-8 TET Memory Chip is a non-volatile memory device that is based on the Electrically Programmable Read-Only Memory (Flash) technology. These chips store data in "cells" that can store one to two bytes of information. This technology uses two transistors and two select gates in each cell, which allows for electrically-erasable programmable read-only memory (EEPROM) functionality.

Flash memory chips are programmed and erased by the use of voltage pulses or by writing data to the chip. Programming is done by charging each cell with electrons. Erasing is done by the removal of charge carriers from the cells. The MT28F800B5WG-8 TET Memory Chip is an example of a Multi-Level Cell (MLC) Flash device. These devices are capable of storing up to four bits per cell, allowing for more efficient storage of data than Single-Level Cell (SLC)devices.

The MT28F800B5WG-8 TET Memory Chip uses the tried and true technology of electrical erasure, meaning the device can be erased in blocks or in its entirety. The chip\'s ECC capabilities, high endurance, and simple programming protocol make it suitable for use in a variety of applications, such as in wearable technology, automotive and mobile applications, healthcare and industrial uses.

Conclusion

The MT28F800B5WG-8 TET Memory Chip is a cost-effective and reliable Flash memory chip that offers great features and performance. It is an excellent solution for embedded applications such as automotive and consumer microcontrollers, medical devices, and wearables. With its multi-level cell design and generous erase times, the MT28F800B5WG-8 TET Memory Chip is a great choice for a variety of applications.