MT45W2MW16BGB-701 IT TR

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Memory

Memory is an important part of computer hardware which enables reliable information storage. Among several memory types, Dynamic Random-Access Memory (DRAM) is commonly used for computer applications. This article introduces one DRAM, the MT45W2MW16BGB-701 IT TR, and explains its application fields and working principle.

Application Fields

The MT45W2MW16BGB-701 IT TR is a DDR3L SDRAM module produced by Micron Technology, Inc., belonging to the 8Gb Micron® 987 DDR3L SDRAM family. It is suitable for a wide range of applications, including embedded systems, communication systems, industrial automation, aerospace and automotive. The module comes in the form of an unbuffered dual in-line memory module (UDIMM), featuring a 16-bit data width and 751-ball BGA packaging. Furthermore, the device boasts high peak transfer rates and power optimization, thanks to its advanced memory controller. The test conditions of the 987 family are set based on a 1.35V device, however, it can also support supply voltage of 1.5V and 1.2V.

Working Principle

DRAM is a type of memory which stores data as charge on the cells of a dynamic array of capacitors. The charge of each capacitor can represent a one (1) or a zero (0), and the cells can store and retrieve a digital data bit from memory as voltage states. A DRAM memory module, like the MT45W2MW16BGB-701 IT TR, is composed of a number of DRAM devices which connect to a common address and data path. Each DRAM device can have up to 2^17 (131072) memory cells arranged in a matrix. The selection of a particular data bit is done by using a set of Column and Row address signals.

To write data, the Row and Column addresses of the target location must be activated, while taking care to prevent destructive interference with other cells in the neighbourhood. Then the data is written on the target location with the help of write data pins. To read data, the address to the target location is set on the address pins and data at that location is read on the data pins.

The MT45W2MW16BGB-701 IT TR also features an auto-precharge command (APC) which helps in refreshing the DRAM cells. This command helps to refresh a series of eight rows of memory devices, including background refresh. In this way data stored in the cells is retained even when the power down.

In summary, the MT45W2MW16BGB-701 IT TR DRAM module is suitable for a wide range of applications and offers high peak transfer rates and power optimization. The module comprises of a number of DRAM devices and works on the principle of storing and retrieving data by using row and column addresses. The module also features an auto-precharge command for background refresh of the cells.

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