MT45W8MW16BGX-701 WT TR Allicdata Electronics
Allicdata Part #:

MT45W8MW16BGX-701WTTR-ND

Manufacturer Part#:

MT45W8MW16BGX-701 WT TR

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC PSRAM 128M PARALLEL 54VFBGA
More Detail: PSRAM (Pseudo SRAM) Memory IC 128Mb (8M x 16) Para...
DataSheet: MT45W8MW16BGX-701 WT TR datasheetMT45W8MW16BGX-701 WT TR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Write Cycle Time - Word, Page: 70ns
Base Part Number: MT45W8MW16
Supplier Device Package: 54-VFBGA (8x10)
Package / Case: 54-VFBGA
Mounting Type: Surface Mount
Operating Temperature: -30°C ~ 85°C (TC)
Voltage - Supply: 1.7 V ~ 1.95 V
Memory Interface: Parallel
Access Time: 70ns
Series: --
Clock Frequency: 104MHz
Memory Size: 128Mb (8M x 16)
Technology: PSRAM (Pseudo SRAM)
Memory Format: PSRAM
Memory Type: Volatile
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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  • Memory
  • MT45W8MW16BGX-701WT TR application field and working principle
  • MT45W8MW16BGX-701WT TR is a high-performance and low-power 16Gbit NAND flash memory, which is suitable for various applications such as mobile phones, personal digital assistants (PDAs), digital cameras, and MP3 players. It is designed to meet the revolutionizing requirements of today’s electronics. This article will discuss its application field and working principle in detail.

    Application Field
    MT45W8MW16BGX-701WT TR, as a universal NAND flash memory, can be used in a wide range of applications that require high capacity and reliable performance. For example, it is integrated in mobile phones as the main storage media and can be used to store contact information, multimedia files, etc. Other than that, it can also be used in PDAs, digital cameras, and MP3 players.

    The MT45W8MW16BGX-701WT TR offers a total of 16 Gbits of data storage, enough for any device with the size of a modern smartphone. The wide operating temperature range between -25℃ and 85℃ allows the NAND flash memory to better adapt to the high temperature and frequent temperature changes in the environment. Furthermore, its advanced error-correction technology ensures more reliable data storage.

    Working Principle
    NAND flash memory, which is the core memory in most portable digital devices, stores data as charge trapped in the transistors, providing a higher density and better performance compared with NOR flash. The MT45W8MW16BGX-701WT TR makes use of the benefits of modern NAND flash memory.

    The MT45W8MW16BGX-701WT TR adopts a double-level flying gate architecture, which helps to support the highest operating temperature up to 85℃. The embedded CrossPoint switch suppression concept ensures accurate and timely data transfer. In addition, its Floating Gate Transistor (FGT) technology provides greater storage capacity and higher stability.

    The MT45W8MW16BGX-701WT TR adopts a 2K page random read/write interface, which is much faster than conventional NAND flash memory. Its 4KB sub-page has long-term data stability, and the write endurance is up to 5000 cycles.

    In conclusion, the MT45W8MW16BGX-701WT TR is a very capable NAND flash memory that can cope with the persistent need for high capacity and reliable performance in today’s digital world. Its wide application field and advanced technology make it an excellent choice for projects that demand the highest level of performance.

The specific data is subject to PDF, and the above content is for reference

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