MT45W4MW16BFB-856 WT Allicdata Electronics
Allicdata Part #:

MT45W4MW16BFB-856WT-ND

Manufacturer Part#:

MT45W4MW16BFB-856 WT

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC PSRAM 64M PARALLEL 54VFBGA
More Detail: PSRAM (Pseudo SRAM) Memory IC 64Mb (4M x 16) Paral...
DataSheet: MT45W4MW16BFB-856 WT datasheetMT45W4MW16BFB-856 WT Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tray 
Part Status: Discontinued at Digi-Key
Memory Type: Volatile
Memory Format: PSRAM
Technology: PSRAM (Pseudo SRAM)
Memory Size: 64Mb (4M x 16)
Write Cycle Time - Word, Page: 85ns
Access Time: 85ns
Memory Interface: Parallel
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 54-VFBGA
Supplier Device Package: 54-VFBGA (6x9)
Base Part Number: MT45W4MW16
Description

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Memory plays an important role in a variety of applications. In those applications, MT45W4MW16BFB-856 WT is a commonly used memory device with a high performance-cost ratio. This article will discuss the application field and working principle of MT45W4MW16BFB-856 WT.

MT45W4MW16BFB-856 WT is a 4Gbit mobile LPDRAM device simulated with a 16-bit bus interface. The device is constructed with four device chips into a single live-cell-free stack. It offers more integration, higher speed, and lower power consumption compared with the traditional DRAM. MT45W4MW16BFB-856 WT is widely used in mobile application fields including smartphones, tablets, notebooks, and other portable or mobile devices.

The working principle of the MT45W4MW16BFB-856 WT is based on a dynamic random access memory (DRAM) circuit. The device has a synchronous design with both rising and falling edges of the clock signal controlling read/write operations. When reading data, the data is first loaded from the memory array into a data buffer. Then the clock is activated, resulting in data being output at the output pins. When writing data, the device stores the data into the data buffer first. After that, the clock is activated and the data is written into the memory array. The device also supports various read/write operations, such as burst mode and independent line mode.

MT45W4MW16BFB-856 WT has a high-density memory layout with a power consumption of 1.2V to 1.65V VDD. The device also has an advanced data error correction code (EDC) to ensure data integrity. Moreover, MT45W4MW16BFB-856 WT offers low power consumption with a deep power-down mode (DPD). This mode helps minimize power consumption when the device is idle or in standby.

In conclusion, MT45W4MW16BFB-856 WT is a 4Gbit mobile LPDRAM device with a synchronous design. It is widely used in mobile applications such as smartphones, tablets, notebooks, and other portable or mobile devices. The device also has a high-density memory layout, an EDC system, and a low power consumption. The advanced features makes MT45W4MW16BFB-856 WT a good choice for memory applications.

The specific data is subject to PDF, and the above content is for reference

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