Memory: MT47H128M8B7-5E L:A TR Application Field and Working Principle

Introduction

MT47H128M8B7-5E L:A TR is a type of memory that has been designed to meet the requirements of memory applications in the entertainment, automotive, aerospace, and medical industries. It is produced by Infineon Technologies, and it offers superior performance compared to other types of memory products. In this article, we will discuss the application field and working principle of MT47H128M8B7-5E L:A TR.

Application Field

MT47H128M8B7-5E L:A TR is used for a variety of applications, including embedded memory devices such as in dashboards, car navigation systems, tablets and smartphones, cellular phones, digital cameras, and video game consoles. It is also used for industrial and commercial applications, including traffic infrastructures, broadcasting systems, networking devices, and smart electrical meters. Additionally, it is used for automotive powertrain systems, and has a robust design that can withstand high temperatures and/or vibrations. The onboard provisions for programming and interfacing with an external microcontroller makes it suitable for automotive applications.

Working Principle

MT47H128M8B7-5E L:A TR has 8 banks of SDRAM memory that are interfaced via a single interface and provide a total capacity of 128 Megabytes (Mbits). It has an operating frequency range of between 33 and 112 MHz and a wide range of temperature support from -40°C to 85°C. The memory has an 8-bit bus operating at a frequency of 33 MHz for stand-alone operation and connects to a controller or microcontroller via the Asynchronous SDRAM Controller (ASDC) compatible with the ARM(r) Cortex(r)-M processor. Each bank of SDRAM has 16 Rowbits, 11 Columnbits and 4K word depth which allows devices with up to 8MB of total memory.

The memory operates asynchronously, meaning that the memory can respond to data requests even with different clock frequencies. It works on the basis of burst type of access; the chip can be accessed in words or double words and can access 64 bits of data, with a burst transmission of 512 bits. The memory can also be programmed with various commands, such as write, read and refresh, to alter the time delay for data access. When an instruction is issued to the memory, the signal is propagated over a distance of 1.1-1.8 microns and the signal is replicated once at the main memory and once at the secondary memory.

In order to ensure optimal operation, the MT47H128M8B7-5E L:A TR memory is equipped with an Asynchronous Error Correction Code (ECC) module. The ECC module is used to detect errors in memory operations and can detect up to 8 bits of errors per byte. Additionally, the memory has an on-chip temperature sensor which allows devices to shut down in the case of over temperature.

Conclusion

In conclusion, MT47H128M8B7-5E L:A TR is a type of memory designed to meet the demands of memory applications in the entertainment, automotive, aerospace and medical industries. It offers superior performance, with an 8-bit bus operating at a frequency of 33 MHz and a wide temperature range of -40°C to 85°C. It also has an Asynchronous Error Correction Code (ECC) module and on-chip temperature sensor for optimal operation. The memory\'s robust design and onboard provisions for programming and interfacing with an external microcontroller make it suitable for a wide range of applications.