MT47H32M16HR-25E:G Allicdata Electronics
Allicdata Part #:

MT47H32M16HR-25E:G-ND

Manufacturer Part#:

MT47H32M16HR-25E:G

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC DRAM 512M PARALLEL 84FBGA
More Detail: SDRAM - DDR2 Memory IC 512Mb (32M x 16) Parallel 4...
DataSheet: MT47H32M16HR-25E:G datasheetMT47H32M16HR-25E:G Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Write Cycle Time - Word, Page: 15ns
Base Part Number: MT47H32M16
Supplier Device Package: 84-FBGA (8x12.5)
Package / Case: 84-TFBGA
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 85°C (TC)
Voltage - Supply: 1.7 V ~ 1.9 V
Memory Interface: Parallel
Access Time: 400ps
Series: --
Clock Frequency: 400MHz
Memory Size: 512Mb (32M x 16)
Technology: SDRAM - DDR2
Memory Format: DRAM
Memory Type: Volatile
Part Status: Obsolete
Packaging: Tray 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

When it comes to memory, the MT47H32M16HR-25E:G device is a great option. It is a high-performance, low-power memory device that is used for a variety of applications. This device is a Synchronous, DDR3-1600 Memory device, which operates at 1.35V and provides speed up to 1.6GHz. It is compatible with 1.5 to 1.8V VDDQ operation, giving it the ability to support multiple voltage domains. It features four memory banks that are composed of four 16-bit data bus width components. This device is a perfect choice for high-performance applications, as it allows for high data rate and supports a cost-effective memory design.

Since the MT47H32M16HR-25E:G device provides high-speed performance, it can be used in many applications, such as data storage and communications. It is used in wireless base station and wireless access point equipment, and is also suitable for embedded applications, such as portable medical equipment, automotive safety systems, security cameras and industrial control systems. Additionally, the device is compatible with multiple processor and system-on-chip (SoC) designs, and is used in many embedded memory designs.

The working principle behind the MT47H32M16HR-25E:G device is based on the principles of synchronous DRAM (SDRAM). The device uses a clock signal to synchronize data transactions between the memory and processor. A clock signal is used to initiate an operation and the data is then transferred between the processor and memory. This type of transfer allows for higher data rate than asynchronous devices, such as static RAM (SRAM).

The clock signal is used to control the timing of the data movement in the form of commands and addresses. The command consists of an address and a signal that indicates whether the operation is going to be a read or a write. The address is used to specify the data location in the memory, while the signal is used to indicate the type of operation. The device processes the command following the address signal and then either reads the data or writes it to the specified location in the memory.

The MT47H32M16HR-25E:G device is programmed through a parallel bus interface, which is an 8-bit interface. It is compatible with industry-standard command set and signal set and also supports the advanced features of DDR3, such as Auto Self Refresh, On Die Termination (ODT) and Multi-bank Activate (MBA). The device supports CAS Latency 5 and has a refresh rate of 7.8μs.

The MT47H32M16HR-25E:G is a great choice for a wide array of applications, as it provides high-speed data transfer and low-power operation. It is ideal for embedded memory designs, industrial control systems, automotive safety systems and portable medical equipment, because it is able to support multiple voltage domains. Additionally, the device is compatible with industry-standard command sets and signal sets and supports the advanced features of DDR3.

The specific data is subject to PDF, and the above content is for reference

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