| Allicdata Part #: | MT47H128M16RT-3:C-ND |
| Manufacturer Part#: |
MT47H128M16RT-3:C |
| Price: | $ 0.00 |
| Product Category: | Integrated Circuits (ICs) |
| Manufacturer: | Micron Technology Inc. |
| Short Description: | IC DRAM 2G PARALLEL 84FBGA |
| More Detail: | SDRAM - DDR2 Memory IC 2Gb (128M x 16) Parallel 33... |
| DataSheet: | MT47H128M16RT-3:C Datasheet/PDF |
| Quantity: | 1000 |
| Write Cycle Time - Word, Page: | 15ns |
| Base Part Number: | MT47H128M16 |
| Supplier Device Package: | 84-FBGA (9x12.5) |
| Package / Case: | 84-TFBGA |
| Mounting Type: | Surface Mount |
| Operating Temperature: | 0°C ~ 85°C (TC) |
| Voltage - Supply: | 1.7 V ~ 1.9 V |
| Memory Interface: | Parallel |
| Access Time: | 450ps |
| Series: | -- |
| Clock Frequency: | 333MHz |
| Memory Size: | 2Gb (128M x 16) |
| Technology: | SDRAM - DDR2 |
| Memory Format: | DRAM |
| Memory Type: | Volatile |
| Part Status: | Obsolete |
| Packaging: | Tray |
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Introduction
The MT47H128M16RT-3:C is a Random Access Memory (RAM) module and is primarily used in embedded applications. In this article, the application fields and working principles of the MT47H128M16RT-3:C will be discussed in detail.
Application Fields of MT47H128M16RT-3:C
The MT47H128M16RT-3:C is primarily used in embedded applications that require high speed read and write access. This includes applications that involve large amounts of data — those that require more than 16 bits wide memory. Specifically, the MT47H128M16RT-3:C can be used in the automotive, industrial, and consumer electronics markets. It is also suitable for applications such as audio/video stream buffering, image processing, and encoding/decoding.
The Working Principle of MT47H128M16RT-3:C
The working principle of the MT47H128M16RT-3:C is based on a static random access memory (SRAM) architecture. It uses two internal static access rows to store its data. Data is written to the RAM in parallel and read in serial. The memory is organized into four groups of 16-bit words and three control inputs (address select, write control, and row decoder). Each group contains two individual 64-bit arrays that each have their own control logic and top-level decode logic.
When writing to the RAM, the address select input is activated and the write control is used to start the write operation. The row decoder is then used to identify the location of the data being written. Upon receiving the data, the write control is deactivated and the address select is deactivated to allow the internal logic to switch the data to the appropriate memory cells. The row decoder then turns off the row address lines.
When reading from the RAM, the address select is activated and the row decoder is used to identify the location of the data being read. Upon detecting the address select input, the internal logic will switch the data to the appropriate memory cells. The row decoder then turns on the row address lines and the read data is output serially through the data output pins. The read operation is then completed.
Conclusion
The MT47H128M16RT-3:C is a Random Access Memory (RAM) module primarily used in embedded applications. It is organized into four groups of 16-bit words and three control inputs, and uses two internal static access rows to store its data. The memory is capable of high speed read and write access and can be used in the automotive, industrial, and consumer electronics markets. Its working principle is based on a static random access memory (SRAM) architecture.
The specific data is subject to PDF, and the above content is for reference
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| MT47H64M16HR-3 AAT:H | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 84FBG... |
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MT47H128M16RT-3:C Datasheet/PDF