MT47H64M16HR-3:H TR

Write Cycle Time - Word, Page:	15ns
Base Part Number:	MT47H64M16
Supplier Device Package:	84-FBGA (8x12.5)
Package / Case:	84-TFBGA
Mounting Type:	Surface Mount
Operating Temperature:	0°C ~ 85°C (TC)
Voltage - Supply:	1.7 V ~ 1.9 V
Memory Interface:	Parallel
Access Time:	450ps
Series:	--
Clock Frequency:	333MHz
Memory Size:	1Gb (64M x 16)
Technology:	SDRAM - DDR2
Memory Format:	DRAM
Memory Type:	Volatile
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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MT47H64M16HR-3:H Memory

The MT47H64M16HR-3:H is a 64 Megabit (8 Megabyte) Synchronous DRAM memory device, composed of two banks of 4,194,304 words by 16 bits. It has a fly-by command control interface that supports multiple read and write operations for recognizing high throughput memory applications.By providing high clock frequency up to 200MHz, MT47H64M16HR-3:H has the capability to allow users to transfer large amount of data quickly from and to the memory. The device also has wide range of power-savings modes that make it an ideal choice for portable communications and multimedia applications. Its smallest possible power consumption enables the device to tolerate a wide range of operating voltages while supporting low power requirements.

Key Features of MT47H64M16HR-3:H

• 64 Megabit (8 Megabyte) Synchronous DRAM memory device with two banks of 4,194,304 words by 16 bits.
• Fly-By control interface with multiple read and write operations.
• Provides high clock frequency up to 200MHz.
• Wide range of power-savings modes.
• Smallest possible power consumption.
• Enables the device to tolerate a wide range of operating voltages while supporting low power requirements.

Application Field of MT47H64M16HR-3:H

The MT47H64M16HR-3:H carries a cost-effective memory interface with high clock frequency and efficient power consumption, making it a suitable choice for various applications. The device finds its application in high bandwidth operations like digital photography, digital video, image processing and graphics manipulation as its massive storage capacity allows for huge exchange of digital data.MT47H64M16HR-3:H is also commonly used in portable computing applications such as laptops, ultrabooks or handheld devices due to its low power requirements and ultra-low voltage support. It is also suitable for embedded applications such as embedded software applications and network equipment.

Working Principle of MT47H64M16HR-3:H

The Fly-By command control interface of MT47H64M16HR-3:H supports multiple read and write operations that allow users to transfer large amount of data quickly, which makes it a perfect solution for high throughput memory applications. The device also performs great in data protection and data integrity, as the write/read operations are solely determined by the clock cycles, making sure data is written and read with precision.It also supports various power-saving modes that enable the device to switch between various power-efficiency states and thus, reducing the overall system power. Furthermore, it can tolerate a wide range of operating voltages making the device less susceptible to power fluctuations.

Conclusion

The MT47H64M16HR-3:H is a 64 Megabit (8 Megabyte) Synchronous DRAM memory device. It carries a fly-by command control interface with multiple read and write operations that offers excellent performance technology and low power requirements. It can be used in multiple applications like digital photography, digital video, image processing, graphics manipulation, laptops, ultrasbooks, handheld devices and embedded applications. The device is also highly compatible for high bandwidth operations and data integrity due to its clock cycles dependent operations and wide range of operating voltages support.

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