
Allicdata Part #: | 557-1290-2-ND |
Manufacturer Part#: |
MT47H64M4BP-37E:B TR |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC DRAM 256M PARALLEL 60FBGA |
More Detail: | SDRAM - DDR2 Memory IC 256Mb (64M x 4) Parallel 26... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Write Cycle Time - Word, Page: | 15ns |
Base Part Number: | MT47H64M4 |
Supplier Device Package: | 60-FBGA (8x12) |
Package / Case: | 60-FBGA |
Mounting Type: | Surface Mount |
Operating Temperature: | 0°C ~ 85°C (TC) |
Voltage - Supply: | 1.7 V ~ 1.9 V |
Memory Interface: | Parallel |
Access Time: | 500ps |
Series: | -- |
Clock Frequency: | 267MHz |
Memory Size: | 256Mb (64M x 4) |
Technology: | SDRAM - DDR2 |
Memory Format: | DRAM |
Memory Type: | Volatile |
Part Status: | Discontinued at Digi-Key |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Memory technology has come a long way in recent years, and one of the most important advances has been the development of the MT47H64M4BP-37E:B TR series of memory devices. This series of memory devices has become increasingly popular in a variety of applications due to its high performance, flexibility, and reliability. In this article, we will explore the application fields of the MT47H64M4BP-37E:B TR series and how it works.
The MT47H64M4BP-37E:B TR series of memory devices are primarily used in the industrial sector to process data and store data. In the industrial sector, these devices are used for a variety of applications, such as communication and process control. They are also used in medical and automotive applications, as well as in consumer electronics and other applications.
The main advantage of the MT47H64M4BP-37E:B TR series of memory devices is that they are optimized for use in industrial settings. For example, the devices feature high-strength, heat-resistant components that make them ideal for use in industrial settings. They also feature low power consumption, fast operating speed, and high memory capacity.
When it comes to working principle, the MT47H64M4BP-37E:B TR memory devices feature four primary elements: a data interface, a controller, a set of memory cells, and a timing device. The data interface allows for communication between the device and a host device. The controller is responsible for controlling the device, including reading and writing data. The memory cells are where data is stored, while the timing device is responsible for controlling the timing of the device operations.
The MT47H64M4BP-37E:B TR series of memory devices are designed to be highly reliable and durable. They feature advanced error-detection and correction technology to ensure that data stored on the device is accurate and can be reliably accessed. Also, the devices feature wear-leveling technology to ensure that each cell is used evenly and the device has a long life.
The MT47H64M4BP-37E:B TR series of memory devices are also designed to be easy to use and maintain. The devices feature an intelligent self-monitoring system that can detect any possible problems and alert the user. Furthermore, the devices are designed to be compatible with a wide range of systems and operating systems, making them easy to integrate into existing systems or develop new ones.
Overall, the MT47H64M4BP-37E:B TR series of memory devices are one of the most advanced devices on the market today. They offer high performance, reliability, and flexibility, making them ideal for use in a variety of industrial, medical, automotive, consumer electronics, and other applications. Furthermore, they are easy to use, maintain, and integrate, making them a great choice for any project.
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MT47H128M8CF-25E AIT:H TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 60FBG... |
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MT47H256M8THN-25E:M TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 63FBG... |
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MT47H512M4THN-25E:M | Micron Techn... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 400MH... |
MT47H64M8CB-5E IT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 60F... |
MT47H256M4HQ-187E:E TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 60FBG... |
MT47H64M8B6-3:D TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 60F... |
MT47H16M16BG-3 IT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 256M PARALLEL 84F... |
MT47H64M8B6-5E IT:D TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 60F... |
MT47H512M8WTR-25E:C | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 63FBG... |
MT47H64M8CF-187E:G | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 60F... |
MT47H128M8JN-3 IT:H | Micron Techn... | -- | 1000 | IC DRAM 1G PARALLEL 60FBG... |
MT47H32M16HR-25E IT:G TR | Micron Techn... | -- | 1000 | IC DRAM 512M PARALLEL 84F... |
MT47H256M4B7-37E:A | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 92FBG... |
MT47H128M8CF-3 IT:H TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 60FBG... |
MT47H64M16HR-25E IT:H TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 84FBG... |
MT47H128M8CF-187E:H TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 60FBG... |
MT47H32M16CC-5E IT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 84F... |
MT47H64M16HR-25E L:G TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 84FBG... |
MT47H64M16HR-3:H TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 84FBG... |
MT47H128M4CF-25E:G TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 60F... |
MT47H64M4BP-37E:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 256M PARALLEL 60F... |
MT47H32M16CC-3E:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 84F... |
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