MT47H64M16HR-25E IT:H TR

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Memory is the fundamental basis of computers, and the continuous improvement of memory performance has directly driven the development of computer systems. The MT47H64M16HR-25E IT:H TR is a dynamic random access memory device (DRAM) developed and launched by Micron Technology Inc., which is applied in high-performance computing, communication and graphics fields, such as servers, enterprise storage, personal computers and discrete graphics markets.

Advantages

MT47H64M16HR-25E IT:H TR has several advantages over traditional DRAMs such as low power consumption, fast speed and high storage capacity. As a chip-scale package form, it features great storage density and can save board space. It also supports Extended temperature operation, with a temperature range of -40℃ to +95℃, allowing it to function in extremely harsh environments.

Moreover, MT47H64M16HR-25E IT:H TR has an integrated ECC (Error Correction Code) that offers data protection and ensures high reliability. It is built upon the latest DRAM technology, which combines advanced DRAM process optimization and design techniques in order to deliver high performance and low power for enterprise and cloud computing applications. The device consists of eight independent DDR3 channels and supports up to 8 ranks of DDR3 memory.

Application field and working principle

The MT47H64M16HR-25E IT:H TR is designed for a wide range of applications, such as servers, network infrastructure, cloud computing, storage systems, and embedded systems. It is well-suited in graphics and multimedia applications, such as gaming and multimedia video players. The device also supports implementation in high-end workstations, routers, switches and bridges.

At its core, the MT47H64M16HR-25E IT:H TR DRAM is a synchronous DRAM module, with a capability to access data at any time. It is organized in a memory matrix fashion, arranged in an 8x8 cell array. This system is divided into four/eight/sixteen banks, each one containing a row address of 4/8/16 bits. The data transfer between the memory cells and the memory controller is done in two different clock cycles: precharge and activate cycle. During the precharge cycle, the memory controller provides the necessary address to be accessed by the memory cells. The activate cycle allows data transfer from the addressed cells to the output.

Once an address is provided, a data request is issued by the memory controller, and the memory cells decode and process the address. The memory cells that are referred to by the provided address are connected to the output pin and the data output starts to flow.

Conclusion

The MT47H64M16HR-25E IT:H TR DRAM is a dynamic random access memory device offering low power consumption and high storage capacity. It is highly suitable for applications such as servers, enterprise storage, PCs, graphics, multimedia and embedded systems. Its integrated ECC and extended temperature support also make it a reliable and robust option for computing needs.

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