MT47H32M16U67A3WC1

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Dynamic Random Access Memory (DRAM) is a type of semiconductor memory which stores binary data using a transistor-capacitor circuit. The MT47H32M16U67A3WC1 is a specific type of memory, known as synchronous DRAM, which includes a signal-technical data-bus interface. This product is a 68-pin, low-power, mobile SDRAM, which operates at a frequency of 166MHz and is 512M-bit. It is typically used in handheld electronics, including mobile phones, digital cameras, netbooks and tablets.

Application Field

The MT47H32M16U67A3WC1 is well-suited for card-type applications that require low power consumption and fast responsiveness. This memory product can therefore be used in battery-operated mobile devices, as well as for multimedia, gaming, and HPC applications. It meets important standards for mobile devices, including high-speed DDR2 and low-power DDR2 SDRAM, ensuring reliability for its users.

Working Principle

The MT47H32M16U67A3WC1 is a high-performance memory which uses dynamic random access memory (DRAM) cells that can be accessed quickly and reliably. DRAM cells employ a capacitor and a transistor as the two primary components. The capacitor holds the data while the transistor controls the capacitor’s reading and writing behavior. The capacitor is charged with a single bit of data in the form of electric charge. This capacitor then discharges the electric charge as a binary one or zero whenever the transistor is activated.

The MT47H32M16U67A3WC1 is also equipped with an on-chip controller that manages the data transfer between the memory array and the user’s interface. This allows for minimum power consumption, making it an optimal choice for battery-operated devices. Furthermore, it features automatic refresh cycles, which provide an additional layer of data protection and maintain the longevity of the memory.

Conclusion

The MT47H32M16U67A3WC1 is a low-power synchronous DRAM designed for use in mobile devices. It can be used for card-type applications that require low power consumption and fast responsiveness. The DRAM cells employ capacitors and transistors to store and control data, and it has an on-chip logic controller to manage data transfer. Additionally, it includes automatic refresh cycles to protect data and maintain the longevity of the memory. All of these features make the MT47H32M16U67A3WC1 an attractive choice for memory applications in mobile projects.

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