| Allicdata Part #: | MT47H128M8B7-37EL:ATR-ND |
| Manufacturer Part#: |
MT47H128M8B7-37E L:A TR |
| Price: | $ 0.00 |
| Product Category: | Integrated Circuits (ICs) |
| Manufacturer: | Micron Technology Inc. |
| Short Description: | IC DRAM 1G PARALLEL 92FBGA |
| More Detail: | SDRAM - DDR2 Memory IC 1Gb (128M x 8) Parallel 267... |
| DataSheet: | MT47H128M8B7-37E L:A TR Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Write Cycle Time - Word, Page: | 15ns |
| Base Part Number: | MT47H128M8 |
| Supplier Device Package: | 92-FBGA (11x19) |
| Package / Case: | 92-VFBGA |
| Mounting Type: | Surface Mount |
| Operating Temperature: | 0°C ~ 85°C (TC) |
| Voltage - Supply: | 1.7 V ~ 1.9 V |
| Memory Interface: | Parallel |
| Access Time: | 400ps |
| Series: | -- |
| Clock Frequency: | 267MHz |
| Memory Size: | 1Gb (128M x 8) |
| Technology: | SDRAM - DDR2 |
| Memory Format: | DRAM |
| Memory Type: | Volatile |
| Part Status: | Discontinued at Digi-Key |
| Packaging: | Tape & Reel (TR) |
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Memory: MT47H128M8B7-37E L:A TR Application Field and Working Principle
Memory is a critical element in today’s digital technology. It is an essential component for a wide range of computing and communication applications. The MT47H128M8B7-37E L:A TR is a type of memory that has many uses in various markets and technology segments.
The MT47H128M8B7-37E L:A TR is an 8-bit synchronous memory chip from Micron Technology. This memory is DRAM-based, meaning that it is non-volatile and retains data even after power-off. It is an 8 Megabyte (MB) chip, which makes it a cost-effective choice for projects that require large memory sizes.
The MT47H128M8B7-37E L:A TR is primarily used in embedded applications, due to its low power consumption and fast access time. This chip is compatible with the ARM Cortex-A7 and Cortex-M4 processor cores, making it a suitable choice for connected devices. Additionally, this memory chip is found in many consumer electronics, including smartphones, tablets and gaming consoles.
The working principle of this memory chip is based on capacitance. Capacitance is the ability of a material to store electric charge. This principle is used in DRAM-based memory to store a digital signal when the processor passes through a voltage or current. Each capacitor is able to store a single bit of data, which can then be read or written by activating the capacitors.
In addition to its embedded applications, the MT47H128M8B7-37E L:A TR is also used in automotive systems. This chip has a built-in "self-refreshing" feature, allowing it to remain powered even when the vehicle is not running. This capability makes the chip suitable for car infotainment systems, where safety and reliability are critical.
The MT47H128M8B7-37E L:A TR is also used in gaming applications, such as the popular PlayStation 4 console. This memory chip is used for game data storage, providing speeds up to 28MT/s. This rate is over three times faster than the average consumer SSD, making it a great choice for game performance.
As a high-performance memory chip, the MT47H128M8B7-37E L:A TR offers an impressive range of features. It is able to operate between 0 and +85 degrees Celsius, making it suitable for a wide range of temperatures. In addition, it supports both ECC (Error-Correcting Code) and XMP (Extreme Memory Profile) protocols, making it an ideal choice for mission-critical applications.
In summary, the MT47H128M8B7-37E L:A TR is an 8-bit memory chip with a wide range of applications, from consumer electronics to automotive systems. Its working principle is based on capacitance, allowing it to store and recall digital signals by activating capacitors. Additionally, its low power consumption, wide temperature range and support for ECC and XMP protocols make it suitable for advanced embedded and gaming applications.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
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| MT47H64M8CB-5E IT:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 60F... |
| MT47R64M16HR-3:H | Micron Techn... | -- | 1000 | IC DRAM 1G PARALLEL 84FBG... |
| MT47H32M16NF-25E AUT:H | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 400... |
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| MT47H128M8CF-3:H | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 60FBG... |
| MT47H64M16HR-25 IT:H | Micron Techn... | -- | 1000 | IC DRAM 1G PARALLEL 84FBG... |
| MT47H256M8THN-3 IT:H | Micron Techn... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 63FBG... |
| MT47H64M8SH-25E:H | Micron Techn... | -- | 1000 | IC DRAM 512M PARALLEL 60F... |
| MT47H512M4EB-3:C | Micron Techn... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 60FBG... |
| MT47H256M8EB-25E XIT:C | Micron Techn... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 60FBG... |
| MT47H32M16BT-37E:A TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 92F... |
| MT47H128M8B7-37E L:A TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 92FBG... |
| MT47H128M16RT-3:C | Micron Techn... | -- | 1000 | IC DRAM 2G PARALLEL 84FBG... |
| MT47R256M4CF-25E:H | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 60FBG... |
| MT47H64M8CB-5E:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 60F... |
| MT47H64M16B7-5E:A | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 92FBG... |
| MT47H512M4THN-3:H | Micron Techn... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 63FBG... |
| MT47R512M4EB-25E:C | Micron Techn... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 60FBG... |
| MT47H32M16BN-3:D TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 84F... |
| MT47H64M16HR-3 AAT:H | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 84FBG... |
| MT47H64M8SH-187E:H TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 533... |
| MT47H32M16BN-3 IT:D TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 84F... |
| MT47H128M8HQ-3:G TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 60FBG... |
| MT47H32M16NF-25E AAT:H | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 84F... |
| MT47H32M16CC-37E:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 84F... |
| MT47H64M8CF-25E IT:G TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 60F... |
| MT47H128M8CF-25E AIT:H TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 60FBG... |
| MT47H128M8SH-25E IT:M | Micron Techn... | -- | 14557 | IC DRAM 1G PARALLEL 60FBG... |
| MT47H64M8B6-3:D TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 60F... |
| MT47H64M16HR-3:H | Micron Techn... | -- | 1000 | IC DRAM 1G PARALLEL 84FBG... |
| MT47H64M16BT-5E:A | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 92FBG... |
| MT47H64M8B6-37E IT:D TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 60F... |
| MT47H256M4HQ-3:E TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 60FBG... |
| MT47H512M4EB-187E:C | Micron Techn... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 60FBG... |
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MT47H128M8B7-37E L:A TR Datasheet/PDF