MT47H128M8CF-187E:H

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Memory is an integral part of modern technology due to its importance in data storage and manipulation. Memory can be divided into two main categories: volatile memory and non-volatile memory. One such example of non-volatile memory is the MT47H128M8CF-187E:H, a product from Micron Technology. This type of memory has several useful applications and is a reliable choice for data storage and its working principle is based on a few fundamentals.

Applications

The MT47H128M8CF-187E:H is a type of DDR3 SDRAM (double data rate 3 synchronous dynamic random-access memory) that is made up of a 512Mb array of 4,194,304 (256Kx16) components. This type of memory is well suited for a variety of applications as it offers fast performance and is able to store large amounts of data. As an example, it has been used in the Xbox One X, a 4K gaming console. The Xbox One X utilizes this type of memory for its fast performance and its ability to store game data.

The MT47H128M8CF-187E:H is also used for automotive applications due to its low power consumption and extended temperature range. It is used in systems such as infotainment, body control, powertrain, chassis systems, and leisure systems. In addition, this type of memory is also useful for applications such as storage, networking, consumer electronics, and embedded systems.

Working Principle

The MT47H128M8CF-187E:H requires very little power to operate and is based on a few fundamental working principles. It operates at a frequency of 1333MHz and has a device width of x8. According to the Random Access Memory (RAM) specifications, this type of memory has an operational voltage range of 1.35V-1.5V and a standby voltage range of 1.2V-1.372V. In addition, this type of memory has a cycle time of 7.8ns and access time of 2.275ns.

Additionally, the MT47H128M8CF-187E:H also utilizes a few fundamental properties of DDR3 SDRAM such as burst length, bank select, and precharge delay. These properties allow the chip to quickly process large amounts of data in a short amount of time. Burst length refers to the number of data transfers that occur in one cycle while precharge delay refers to the time required before the next burst can be initiated. Finally, bank select is a property that allows the chip to switch between banks of memory when processing data.

Conclusion

The MT47H128M8CF-187E:H memory chip is a reliable choice for data storage and handling. It is able to store large amounts of data while remaining power efficient and with a fast performance. It has several useful applications such as automotive, gaming console, storage, networking, consumer electronics, and embedded systems. Finally, the chip is based on a few fundamental working principles such as cycle time, access time, burst length, precharge delay, and bank select, allowing it to quickly process large amounts of data in a short amount of time.

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