MT47H128M8HQ-3:E TR

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Memory: MT47H128M8HQ-3:E TR Application Field and Working Principle

MT47H128M8HQ-3:E TR is a type of mobile dynamic random access memory (DRAM) produced by Micron Technology, Inc. It is a 16-gigabit (Gb) quad-die, monolithic, stacked double data rate-3 (DDR3) synchronous DRAM. The memory chip offers an array of features and benefits for systems requiring high-density, low-power operation such as notebook PCs, tablets, and digital TV set-top boxes.

The primary benefit of MT47H128M8HQ-3:E TR is its high memory density, providing 16 gigabits of storage in a single chip. This makes it well-suited for applications that require large amounts of storage, such as digital TV set-top boxes, which must store large amounts of streaming video data. The memory chip also offers lower power consumption compared to other DRAM solutions on the market, making it ideal for battery-powered applications such as tablets and notebooks.

MT47H128M8HQ-3:E TR Features

The MT47H128M8HQ-3:E TR is a SDRAM (synchronous dynamic random access memory) solution with a 16-gigabit density that is designed to run at high clock frequencies. It features 2 banks x 8 devices x 16 bits, giving it a total of 256 megabits (Mb) of capacity. It is available in a 84-ball FBGA package, the smallest available for a DDR3 device.

The memory chip supports up to 1866 Mbps data rate, and operates at an input frequency of 200 MHz when using an SDR interface and 400 MHz when using an EDO interface. It has an operating temperature range of -40°C to +95°C, making it well-suited for a wide variety of applications.

The chip also features two on-die terminations (ODT) which reduce EMI and power consumption. It supports low-voltage command and address signals (1.35, 1.5, 1.65 and 1.8V), allowing it to be used in a wide range of systems. The chip also supports error correction code (ECC) to enhance system reliability.

MT47H128M8HQ-3:E TR Working Principle

The MT47H128M8HQ-3:E TR is a synchronous DRAM, which means that it relies on an external clock signal to control the flow of data. When power is applied to the chip, the internal circuit of the chip is activated and the clock signal starts to oscillate. This clock signal is used to synchronize the data transfers between the chip and the system bus.

When the system needs to access the data stored in the memory chip, it sends out a command signal that provides the memory address of the required data. This command signal is used to assert a row address strobe and a column address strobe that provide the location of the required data. Once these strobes are received, the DRAM chip activates the specified memory location, retrieves the data from the memory location, and passes the data back to the system.

Once the data transfer is complete, the DRAM chip will reply with a write signal to complete the operation, and then it will enter a low power consumption state until the system sends out a new command. The DRAM chip can thus provide data access to the system at low power consumption levels, thus increasing battery life and system performance.

Conclusion

The MT47H128M8HQ-3:E TR is a high-performance, low-power mobile DRAM solution that provides 16 gigabits of storage in a single chip. It offers a wide range of features, including a high-speed data rate, low-voltage command and address signals, and two on-die terminations, making it well-suited for applications such as digital TVs, notebooks, and tablets. Additionally, its synchronous architecture allows it to provide data access to the system at low power consumption levels, making it an ideal choice for battery-powered devices.

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