MT47H256M8EB-187E:C TR

Write Cycle Time - Word, Page:	15ns
Base Part Number:	MT47H256M8
Supplier Device Package:	60-FBGA (9x11.5)
Package / Case:	60-TFBGA
Mounting Type:	Surface Mount
Operating Temperature:	0°C ~ 85°C (TC)
Voltage - Supply:	1.7 V ~ 1.9 V
Memory Interface:	Parallel
Access Time:	350ps
Series:	--
Clock Frequency:	533MHz
Memory Size:	2Gb (256M x 8)
Technology:	SDRAM - DDR2
Memory Format:	DRAM
Memory Type:	Volatile
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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Memory technology is an important and exciting area of microelectronics engineering. Memory cells are the basis of modern electronics and have become increasingly complex over the years. The MT47H256M8EB-187E:C TR is a 256-Mb DDR2 dynamic random access memory (DRAM) based on 0.11-µm process technology, which is a mainstream memory device. Manufactured by Microchip Technology Corporation, the MT47H256M8EB-187E:C TR is designed for use in a variety of digital electronics and communication devices, including digital cameras, digital video recorders, digital TVs, smartphones, and more. This article provides a detailed description of the MT47H256M8EB-187E:C TR DRAM\'s application fields, features, and working principle.The MT47H256M8EB-187E:C TR DRAM is an ideal low-cost memory solution for digital electronic devices that require large amounts of memory capacity. The device is based on 56nm process technology which allows for power saving and cost-effective design. The MT47H256M8EB-187E:C TR DRAM has a maximum operating frequency of 533MHz, and maximum data rate of 667Mbps with a Vddq of 1.5V to 1.65V. The device has a typical active power consumption of 0.85W, making it ideal for use in portable and battery powered devices. The MT47H256M8EB-187E:C TR DRAM module is available in a small 409-mil, 54-pin TFBGA package with a simple pin-out, making it easier to integrate into a system.In terms of features, the MT47H256M8EB-187E:C TR DRAM is designed to support a wide range of features to improve system performance and reliability. It comes with a minimal refresh period of 16ms, a built-in self-refresh feature for low power consumption, an auto-power management feature for faster access time, and an auto-calibration feature for better performance. The device also supports error-correcting code (ECC) and thermal sensor options to improve system error handling and data integrity. The device can be programmed to use XOR and CRC parity computations, enabling higher data integrity when data is transferred. In addition, the device features a write protect mode to prevent temporary data from being lost in the event of power/voltage failure.The MT47H256M8EB-187E:C TR DRAM utilizes an array of memory cells arranged in an interlocked cell formation known as a DRAM array. The DRAM array consists of an array of cells connected in an interlocked fashion, where the output of one set of cells is connected to the input of another set of cells. This enables the memory cells to be connected in a bidirectional way, allowing data to be read from and written to the memory array. The MT47H256M8EB-187E:C TR DRAM makes use of five operating modes to access data (sequential, random, burst, and read/write accesses) and to ensure that data is stored reliably. The device also makes use of an address latch circuit, which is used to store the address of the read/write cells, and a sense amplifier, which is used to sense the stored data. The sense amplifier will then drive the data onto the data bus once it is read, allowing the data to be read or written to the DRAM array.The MT47H256M8EB-187E:C TR DRAM is an advanced memory solution for digital electronic devices that requires high speed and low power consumption. With its advanced features, the device is capable of delivering excellent performance and reliability at a reasonable price. It is designed to be easy to integrate into systems, allowing system designers to focus on the features and operation of their systems, instead of worrying about the design of the memory device.

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