MT47H256M8EB-3:C TR Allicdata Electronics
Allicdata Part #:

MT47H256M8EB-3:CTR-ND

Manufacturer Part#:

MT47H256M8EB-3:C TR

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC DRAM 2G PARALLEL 60FBGA
More Detail: SDRAM - DDR2 Memory IC 2Gb (256M x 8) Parallel 333...
DataSheet: MT47H256M8EB-3:C TR datasheetMT47H256M8EB-3:C TR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR2
Memory Size: 2Gb (256M x 8)
Clock Frequency: 333MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 450ps
Memory Interface: Parallel
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: 0°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 60-TFBGA
Supplier Device Package: 60-FBGA (9x11.5)
Description

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Many electrical engineering projects require memory devices, and these memory devices have different categories, such as static memory, dynamic memory, etc. Among them, DRAM is the most common dynamic memory device used in many industrial and consumer products, and has become an indispensable component in modern industrial production. The MT47H256M8JB-3: C TR produced by Micron is a type of DRAM, which is often used in many fields and applications. Then, let us explain what is this device, what application fields it can be used in and its working principles.

The MT47H256M8JB-3: C TR is an 8Gb DDR3 SDRAM device. It is a type of DRAM, which is an abbreviation of Dynamic Random Access Memory. It is mainly used in products such as mobile phones, tablets, and PCs. The device has a wide operating temperature range and it is able to be operated across a voltage range of 1.35V to 1.5V. It’s main features include low power dissipation and small footprint. The device also comes with advanced error correction capability, as well as self-refresh and thermal monitoring.

The application fields of this device mainly include embedded systems, communications, automotive, and consumer electronics. In embedded systems, the device is used as a memory device in a variety of applications, ranging from process control and factory automation to medical electronics and set-top box applications. In communications, the device is mainly used in the production of wireless and wired networks and communication equipment. In automotive applications, MT47H256M8JB-3: C TR is increasingly being adopted in high-performance embedded systems which need high-bandwidth and capacity, such as advanced driver assistance systems (ADAS) and powertrain systems. In consumer electronics, this device is used in a variety of products, such as home appliances and portable electronic products, where it is applied in memory storage and network data transmission.

In addition, the MT47H256M8JB-3: C TR comes with the traditional eight-bit-per-cell architecture. The device is divided into eight separate banks and each cell can store information in the form of eight individual bits. It also has a fast random read and write speed, which is further enhanced with the support of the on-die termination, thermal monitoring and self-refresh features. All these features combined make this device suitable for working with high-speed data applications, such as synthetic aperture radar (SAR) systems, packet processing systems, gaming systems and autonomous vehicle systems.

Overall, the MT47H256M8JB-3: C TR is a type of DRAM device which has a wide range of application fields, including embedded systems, communications, automotive, and consumer electronics. It comes with many useful features, such as low power dissipation and advanced error correction, which make it a reliable memory device for use in high-speed systems. Thanks to its wide range of applications and features, it has become one of the most popular memory devices for use in the modern electronics industry.

The specific data is subject to PDF, and the above content is for reference

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