MT47H64M16BT-3:A TR

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The MT47H64M16BT-3: A is a type of dual-channel synchronous dynamic random access memory (SDRAM) developed by Micron. It is marketed as an improved version of the earlier MT47H64M16BT-75 memory. The MT47H64M16BT-3: A is a 64M x 16-bit memory device, meaning it contains 64 megabits (8 megabytes) of data storage. The memory is built using advanced 0.13µm CMOS process technology and is organized into two banks (sets of data bits).

The primary purpose of the MT47H64M16BT-3: A memory is to provide a fast, reliable, and inexpensive form of memory for a wide range of applications. This type of memory is especially useful for applications that require rapid access to large amounts of data. Typical uses for the MT47H64M16BT-3: A include music and video playback, gaming consoles, networking applications, and high-end audio and video applications. Additionally, the memory can be used in connection with digital signal processing devices, as well as digital cameras.

The MT47H64M16BT-3: A is designed to allow for fast data transfer rates. It utilizes a double-data-rate interface, which supports both DDR and DDR2 operation. This allows the memory to read and write data at a rate of up to 133MHz, or 8.5GB/s. Additionally, the MT47H64M16BT-3: A uses a chip-select input to control the memory access. This allows for easy configuration of the device.

The MT47H64M16BT-3: A has a wide range of features that make it a versatile memory device. The device is compatible with both Windows and Linux operating systems. It utilizes dynamic single-bit error correction (SBE) to ensure data integrity. Additionally, the device is designed to be able to run under extreme temperatures, making it well suited for use in industrial applications.

The MT47H64M16BT-3: A is a highly advanced SDRAM device that offers an impressive array of features. The device is capable of providing fast and reliable data storage for a wide range of applications. With its wide range of features, the MT47H64M16BT-3: A is sure to be an ideal choice for many memory requirements.

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