
Allicdata Part #: | 557-1441-2-ND |
Manufacturer Part#: |
MT47H64M16HR-3:G TR |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC DRAM 1G PARALLEL 84FBGA |
More Detail: | SDRAM - DDR2 Memory IC 1Gb (64M x 16) Parallel 333... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Write Cycle Time - Word, Page: | 15ns |
Base Part Number: | MT47H64M16 |
Supplier Device Package: | 84-FBGA (8x12.5) |
Package / Case: | 84-TFBGA |
Mounting Type: | Surface Mount |
Operating Temperature: | 0°C ~ 85°C (TC) |
Voltage - Supply: | 1.7 V ~ 1.9 V |
Memory Interface: | Parallel |
Access Time: | 450ps |
Series: | -- |
Clock Frequency: | 333MHz |
Memory Size: | 1Gb (64M x 16) |
Technology: | SDRAM - DDR2 |
Memory Format: | DRAM |
Memory Type: | Volatile |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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Memory: MT47H64M16HR-3:G TR application field and working principle
Memory is a type of computer architecture where data is quickly accessed and stored inside on a chip. Memory technology has been rapidly improving over the years, leading to improved performance and cost efficiency for many aspects of computing. MT47H64M16HR-3:G TR is a type of dynamic random access memory (DRAM) with 256Mx16 Bit (4Gb). It has been designed to provide high speed memory performance with low power consumption in which the memory is organized with 16 banks, enabling fast access to data while preserving a bit of power.
Application Field:
The MT47H64M16HR-3:G TR is mainly used for consumer electronics, such as digital cameras and handheld games. It is also in high-end computing and communication applications, including server, network processor designs. This type of memory features low power operation and robust data correction, making it a great choice for many electronic devices.
Working Principle:
The MT47H64M16HR-3:G TR memory works by storing data on its volatile layer, which is made up of capacitors and transistors. When a capacitor is empty, it is in the Electronically High state, while with an electric charge, it is in the Electronically Low state. This binary state stores data as "1"s and "0"s. The memory itself is organized in cells, each made up of two transistors and one capacitor.
The memory controller sends command signals and address information to the memory cells, which cause the cell to enter the refresh cycle. During refresh, the cells read the stored data, and refresh is needed to preserve the data over time. Data is read from the cells by sending a strobe signal for each cell. This strobe signal causes the cell to temporarily enter a Write/Read mode, and a sense amplifier reads the charge on the capacitor and updates the data accordingly.
Conclusion
The MT47H64M16HR-3:G TR memory is a type of DRAM designed for low power, high speed applications. It is built with 256Mx16 Bit organization and features 16 banks for fast access to data. The working principle of the MT47H64M16HR-3:G TR is based on the two-transistor and one-capacitor cell. Data is stored on the capacitor and can be read or refreshed by sending command, address and strobe signals to the memory cell. This type of memory is mainly used in consumer electronics and high-end computing.
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