MT47H64M8B6-37E:D TR

MT47H64M8B6-37E:D TR Application Field and Working Principle

Memory

The MT47H64M8B6-37E:D TR is a hybrid, device-level and system-level integration type non-volatile memory, designed with an embedded static random access memory and an array of 8 megabits of NAND Flash memory. In particular, among main features of MT47H64M8B6-37E:D TR is the integration of four separate independent banks that help increase data manipulation and allow memory expansion without increasing board size.

The device MT47H64M8B6-37E:D TR is suitable for industries requiring low-density, high-speed access, such as computers, consumer electronics, telecommunication, and automotive. This device is applicable to hard drives, personal digital assistants, intelligent home appliances, smart cards, memory cards, digital video cameras, electronic wallets, digital handheld games, video players, and digital set-top boxes.

The MT47H64M8B6-37E:D TR works with an asynchronous protocol to use every single device with unique addresses. This type of protocol reduces the complexity of system design and provides latency time of 4ns during write operation. The field of operation is from zero- to 667-MHz and supply voltage from 1.7V to 1.95V. It was designed for the purpose of allowing system designers to minimize power consumption and reduce pin count.

The internal cellular architecture of MT47H64M8B6-37E:D TR, when combined with its state-of-the-art process technology, establishes an efficient and fast-access system operation. Every bank and block of the NAND flash memory is independently erasable. In addition, the write protection feature helps prevent inadvertent writing to non-volatile memory.

The product MT47H64M8B6-37E:D TR is organized as 4 banks of 8M words. The device includes an internal data register, consisting of a page buffer that allows high speed operations and successive addresses without initial setup times. The page buffer of MT47H64M8B6-37E:D TR is composed of 3 sub-registers: input data register (4Kwords), output data register (4K words) and spare area register (16 words).

Moreover, the device includes an error correction feature (ECC) that can detect up to 2 bits of error during read operations. The ECC has a Hamming algorithm to detect single-bit errors and Check-Sum algorithm to detect two bits of errors. Additionally, MT47H64M8B6-37E:D TR provides fast programming and high data sheet density. The write and program mode of the device is via a multiple-bitwise program operation.

In conclusion, MT47H64M8B6-37E:D TR was designed to be used in applications that require fast data manipulation and accurate memory expansion. This memory device consist of four independent banks that help increase data manipulation and reduces power consumption. Moreover, the device includes an internal data register, error correction feature (ECC) and fast programming mode.