Allicdata Part #: | MTM231100LTR-ND |
Manufacturer Part#: |
MTM231100L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | MOSFET P-CH 12V 4A SMINI-3 |
More Detail: | P-Channel 12V 4A (Ta) 500mW (Ta) Surface Mount SMi... |
DataSheet: | MTM231100L Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 1V @ 1mA |
Package / Case: | SC-70, SOT-323 |
Supplier Device Package: | SMini3-G1 |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 500mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1200pF @ 10V |
Vgs (Max): | ±8V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 40 mOhm @ 1A, 4V |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4V |
Current - Continuous Drain (Id) @ 25°C: | 4A (Ta) |
Drain to Source Voltage (Vdss): | 12V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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MOSFETS, or Metal Oxide Semiconductor Field Effect Transistors, are a type of transistor commonly used in the electronic industry. As their name implies, they are used to control the electron flow between the source and the drain using a control signal applied to a gate electrode. One type of MOSFET is the MTM231100L, which is a single N-channel enhancement mode MOSFET with a logic signal input.
The MTM231100L is meant to be used in applications requiring high speed switching with low on-resistance and low gate capacitance. It can be used in a variety of applications such as switching, power management, and linear applications. Additionally, the MTM231100L has a maximum current rating of 11A and can handle drain-source voltage of up to 100V.
The MTM231100L is constructed of an epitaxial layer of n-type silicon connected to a drain region and a source region. The entirety of the transistor is covered with an oxide layer, except for the gate contact area which is protected by a field oxide layer. The gate and drain regions are connected to different external circuits, allowing the transistor to be controlled with a gate voltage. The operation of the MTM231100L is based on the principle of an insulating oxide layer between two conducting contacts.
When the gate is biased negatively or no signal is applied, the transistor acts like an open switch acting as an open circuit between the source and drain regions. This allows the device to be used as an electrically controlled switch as the gate voltage needs to remain below the threshold to keep the two regions isolated. When a positive voltage is applied to the gate, a depletion region is formed at the oxide-silicon interface. This increases the potential barrier between the source and drain, thus the device acts as a closed switch.
The MTM231100L\'s main advantage lies in its high switching speed. Due to its low capacitance and low resistance, it can switch quickly and efficiently with minimal switching losses. Additionally, the transistor can handle high voltages, which makes it suitable for high power applications. It is also easy to control with a simple logic signal input.
The MTM231100L is a great choice for a variety of applications due to its efficiency and high switching speed. It is suitable for use in motor control, switching applications, and power management. With its wide operating range and low gate capacitance, it is a reliable and user-friendly choice.
The specific data is subject to PDF, and the above content is for reference
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