Allicdata Part #: | MTM231232LBFTR-ND |
Manufacturer Part#: |
MTM231232LBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | MOSFET P-CH 20V 3A |
More Detail: | P-Channel 20V 3A (Ta) 500mW (Ta) Surface Mount SMi... |
DataSheet: | MTM231232LBF Datasheet/PDF |
Quantity: | 24000 |
Vgs(th) (Max) @ Id: | 1.3V @ 1mA |
Base Part Number: | MTM231232 |
Package / Case: | SC-70, SOT-323 |
Supplier Device Package: | SMini3-G1-B |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 500mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1000pF @ 10V |
Vgs (Max): | ±10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 55 mOhm @ 1A, 4V |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 3A (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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In today’s highly automated and computerized industry, the needs for reliable and advanced electronic components continues to grow. Transistors are among the most important electronic components, and one of the most popular type is the Metal Oxide Semiconductor Field Effect Transistor (MOSFET). The MTM231232LBF is a single Enhancement-mode MOSFET manufactured by Vishay Intertechnology, a leading manufacturer of high power MOSFETs. It is designed for use in high frequency switching applications as well as high voltage, low voltage and low power circuits.
Nominally supplied in a TO-220 package, the MTM231232LBF has an on-state resistance of 0.006 Ohms, a drain-source breakdown voltage of 200 Volts, a maximum drain current of 60 Amps, and a gate charge rating of 20 nC. Its features enable the component to be used in a wide range of applications, including power supply and control, LED lighting applications, and DC-to-DC converter applications. Since it is capable of handling both high power and low power circuitry, the MTM231232LBF is an ideal component for use in automotive, aerospace, computer, and telecommunications systems.
The working principle of a MOSFET involves an electric field between the source and drain regions. When a voltage is applied to the gate of the component, the electric field increases and electrons from the source region are attracted to the drain region. This allows current to flow from the source to the drain, thus resulting in controlled conduction in the channel between source and drain. This is known as the enhancement mode, or “ON” state of the component.
When the voltage applied to the gate is negative, the electric field between the source and drain reduces and the conduction in the channel is reduced. This is known as the depletion mode, or “OFF” state of the component. This makes the MTM231232LBF suitable for use in switch-mode power supplies and low power circuits, as well as high power circuits.
An important feature of the MTM231232LBF is that it is a low-on resistance (RDS(on)) component, meaning that it has very low resistance when in the “ON” state. This helps to reduce power consumption, making the component very efficient. Additionally, the component is AEC-Q101 qualified, making it suitable for automotive applications.
In summary, the MTM231232LBF is an ideal component for a wide range of applications due to its low resistance and high power handling capabilities. It can be used in both low power and high power circuits, and its low power consumption makes it an efficient component. The component is also AEC-Q101 qualified, making it suitable for automotive applications.
The specific data is subject to PDF, and the above content is for reference
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