N0601N-ZK-E1-AY

Vgs(th) (Max) @ Id:	--
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	TO-263
Mounting Type:	Surface Mount
Operating Temperature:	150°C (TJ)
Power Dissipation (Max):	1.5W (Ta), 156W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	7730pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	133nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	4.2 mOhm @ 50A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	100A (Ta)
Drain to Source Voltage (Vdss):	60V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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The N0601N-ZK-E1-AY transistor is a single-ended high-voltage, dual-JFET device suitable for a variety of applications. It offers low input capacitance, high current gain, and low total power dissipation. It is commonly used in power switching applications, such as in power MOSFETs, IGBTs, DC-DC converters, as well as for RF switching applications. Its high speed allows it to switch quickly and efficiently.The N0601N-ZK-E1-AY has two JFETs (junction field-effect transistors) connected in parallel, with both having gate-source and gate-drain junctions. The gate is the terminal of the device that serves as the control element, allowing current to pass through the structure when a certain amount of voltage is applied to it. This voltage is referred to as the “threshold voltage”, and it determines how much current will pass through the device when a certain voltage is applied to the gate.The N0601N-ZK-E1-AY is a low capacitance device, so it can be used in applications where switching speeds are essential. It also has an inherently high current gain, which makes it suitable for a wide range of power supply applications. It is often used in power switching applications, as it can handle very large currents with a low total power dissipation. Additionally, its self-protection effect helps it to protect itself from thermal damage, which is useful in switching applications.The N0601N-ZK-E1-AY is also often used in RF switching applications, as its low capacitance reduces the effect of signal reflection. Its high current gain is also useful in such applications, as it allows very high signal power levels to be switched without drawing too much current. Additionally, its high switching speed makes it suitable for highly-dynamic radio frequency switching applications.To sum up, the N0601N-ZK-E1-AY application field is broad and it can be used in many different applications, such as power supply systems, RF switching applications and in many high speed switching applications. It features low input capacitance, high current gain, and low total power dissipation, which makes it suitable for a variety of applications and ensures efficient performance. Its fast switching speed further makes it suitable for high-dynamic radio frequency switching applications.

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