| Allicdata Part #: | N0603N-S23-AY-ND |
| Manufacturer Part#: |
N0603N-S23-AY |
| Price: | $ 0.69 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Renesas Electronics America |
| Short Description: | MOSFET N-CH 60V 100A TO-262 |
| More Detail: | N-Channel 60V 100A (Ta) 1.5W (Ta), 156W (Tc) Throu... |
| DataSheet: |  N0603N-S23-AY Datasheet/PDF |
| Quantity: | 1000 |
| 2000 +: | $ 0.61619 |
| Vgs(th) (Max) @ Id: | -- |
| Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Supplier Device Package: | TO-262 |
| Mounting Type: | Through Hole |
| Operating Temperature: | 150°C (TJ) |
| Power Dissipation (Max): | 1.5W (Ta), 156W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 7730pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 133nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 4.6 mOhm @ 50A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 100A (Ta) |
| Drain to Source Voltage (Vdss): | 60V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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The N0603N-S23-AY is a revolutionary new MOSFET that has the potential to revolutionize the electronics industry. This MOSFET can be applied in a variety of areas, from telecommunications to automotive, and is considered to be a very reliable and efficient amplifier. This article will discuss the application fields of the N0603N-S23-AY and its working principle.
The N0603N-S23-AY MOSFET is quite popular in the telecommunications industry due to its high power output and low input voltage requirement. It can be used in base stations, wireless LANs, and digital signal processing systems. The MOSFET has the capability of performing at a high level of efficiency and can be used with a wide variety of signal modulation techniques.
The N0603N-S23-AY can also be used in automotive electronics. Since the MOSFET has a low input voltage requirement, it is suitable for use with many of the automotive voltage levels. Additionally, it can be used to reduce switching noise and to provide higher power outputs for systems such as amplifiers and audio systems. The MOSFET is a great choice for applications that require high reliability and efficiency.
In order to understand the working principle of the N0603N-S23-AY, it is important to understand the fundamentals of MOSFETs. MOSFETs are transistors that utilize a metal-oxide-semiconductor architecture, which allows them to be used as amplifiers. A MOSFET can be configured to operate as either an enhancement or depletion mode device depending on how it is configured.
The N0603N-S23-AY is classified as an enhancement mode device. This means that when a voltage is applied to the gate of a MOSFET, the channel between the source and drain will be enhanced. This will allow for an easy flow of current from the source to the drain, and thus create an amplification effect.
The N0603N-S23-AY has the unique ability to operate at higher performance levels than other MOSFETs while still providing a very low input voltage requirement. This is due in part to its advanced design and the use of high voltage field-effect-transistor (HVFET) technology. This technology allows the MOSFET to provide an extremely fast response time, which is ideal for high speed applications.
The N0603N-S23-AY also has very low on-resistance, which means that it has the ability to operate at very high levels of efficiency. This is ideal for applications such as power supplies, power generators, and automotive audio systems.
The N0603N-S23-AY is a powerful and reliable MOSFET that can be applied in a variety of areas. It is a great choice for those who require high performance and reliability in their electronics applications. The advanced design and high voltage field-effect-transistor technology allow it to provide a very fast response time and low on-resistance. Additionally, it is capable of providing a high level of efficiency for applications such as power supplies and automotive audio systems.
The specific data is subject to PDF, and the above content is for reference
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