Allicdata Part #: | N0602N-S19-AY-ND |
Manufacturer Part#: |
N0602N-S19-AY |
Price: | $ 0.69 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Renesas Electronics America |
Short Description: | MOSFET N-CH 60V 100A TO-220 |
More Detail: | N-Channel 60V 100A (Ta) 1.5W (Ta), 156W (Tc) Throu... |
DataSheet: | N0602N-S19-AY Datasheet/PDF |
Quantity: | 1000 |
2000 +: | $ 0.61619 |
Vgs(th) (Max) @ Id: | -- |
Package / Case: | TO-220-3 Isolated Tab |
Supplier Device Package: | TO-220-3 |
Mounting Type: | Through Hole |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 1.5W (Ta), 156W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 7730pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 133nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 4.6 mOhm @ 50A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 100A (Ta) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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Introduction
The N0602N-S19-AY is a transistor, specifically a Field Effect Transistor, or FET. It is a MOSFET, or Metal-Oxide-Semiconductor Field Effect Transistor, and it is a single FET. FETs are field effect transistors commonly used in switching, analog signals and power management applications. A FET is a three-terminal device consisting of a source, drain, and gate.
Application Field
The N0602N-S19-AY is usually used in the application fields of switching, power management, and analog signal over a wide range of temperatures. It is also capable of operating in a very low current range, making it suitable for signal amplifiers and other similar device applications. The N0602N-S19-AY is also able to provide stable operating temperatures at up to 175 degrees Celsius, making it well-suited for continuous working environment.
Working Principle
The N0602N-S19-AY works on the principles of field effect transistors. In such a transistor, a voltage applied to the gate changes the current flow between the source and the drain using the properties of a reverse biased junction. In N type materials, the current flow is increased when a voltage is applied to the gate, whereas in P type materials, the current flow is decreased when a voltage is applied to the gate. This property of a field effect transistor is known as the field effect.
The N0602N-S19-AY contains a MOSFET which comprises a gate oxide with a gate electrode and two other electrodes, the source and the drain. These electrodes serve to control the current flow in the device. The gate oxide acts as an insulator, preventing any current from flowing until the voltage applied to the gate electrode is sufficient to break down the oxide layer, allowing current to flow through the device. This way, the gate voltage can be used to control the current through the N0602N-S19-AY.
The N0602N-S19-AY can also be used in linear applications such as amplifier stages, where a voltage applied to the gate affects the output stage of the device. It is also capable of operating in high power applications such as HVAC systems, motor drivers, and motor control applications. Additionally, due to its ability to operate across a wide temperature range, the N0602N-S19-AY is suitable for applications which require temperature stability such as electronic amplifiers.
Conclusion
In conclusion, the N0602N-S19-AY is a field effect transistor with applications in switching, power management, and analog signal. It operates on the principles of field effect transistors, and is capable of operating in a very low current range, as well as providing stable temperatures up to 175 degrees Celsius. The N0602N-S19-AY is suitable for applications in amplifier stages, HVAC systems, motor drivers, motor control, and a variety of other applications.
The specific data is subject to PDF, and the above content is for reference
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