NDB4050 Discrete Semiconductor Products |
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Allicdata Part #: | NDB4050TR-ND |
Manufacturer Part#: |
NDB4050 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 50V 15A D2PAK |
More Detail: | N-Channel 50V 15A (Tc) 50W (Tc) Surface Mount D²PA... |
DataSheet: | NDB4050 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D²PAK (TO-263AB) |
Mounting Type: | Surface Mount |
Operating Temperature: | -65°C ~ 175°C (TJ) |
Power Dissipation (Max): | 50W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 450pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 17nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 100 mOhm @ 7.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 15A (Tc) |
Drain to Source Voltage (Vdss): | 50V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The NDB4050 is a specific type of Single Polarity Unipolar Standard-Level Field-Effect Transistor (FET). It has a 40V drain-source breakdown voltage and an P-Channel, meaning that it can handle an on-state current of up to 4 amps. Generally, the NDB4050 is used in a variety of applications such as high-end audio amplifiers, logic level power supplies, and power circuits. In this article, we will discuss the various applications and working principles of the NDB4050.
Application Field
In high-end audio applications, the NDB4050 can be used as a power switch for the audio amplifier circuit. It is particularly suitable for the task because of its high-drain source break-down voltage and its low on-state resistance. In addition, it also has a very low gate threshold voltage and a high peak current rating. This allows for efficient and smooth operation of the audio circuit.
The NDB4050 can also be used in logic level power supplies. In this application, the transistor is typically used to shut off the power supply when there is no signal detected. It can also be used in reverse-direction power supply, where the transistor is used to shunt current away from the power supply when the signal is detected. This will help prevent the circuit from overheating and thus ensure prolonged operation.
The NDB4050 can also be used in power circuits such as DC-DC converters and DC motors. In these applications, its high peak current rating and its low on-state resistance make it a good choice for efficient current regulation. This helps reduce energy loss and ultimately helps the circuit maintain its optimal performance.
Working Principle
The NDB4050 works by utilizing the principle of a field-effect transistor. It has three terminals, gate, drain and source. When a voltage is applied to the gate terminal, it creates an electrical field that affects the conduction of electrons between the drain and the source. The electrons can be either blocked (off-state) or allowed to flow through the transistor (on-state).
When the gate voltage is zero (off-state), the drain-source current is blocked and the transistor acts as a high impedance. When a positive gate voltage is applied (on-state), the drain-source current is allowed to flow and the transistor acts as a low impedance. This results in a low power loss and efficient operation of the circuit.
The NDB4050 has three important parameters – the gate-source voltage (VGS), the drain-source voltage (VDS) and the drain-source current (IDS). The maximum drain-source voltage and current for the NDB4050 are 40V and 4A respectively. The gate-source voltage is typically in the range of 0.1V–2V.
Conclusion
The NDB4050 is a unipolar standard-level FET which is typically used in a variety of applications such as high-end audio amplifiers, logic level power supplies and power circuits. It works on the principle of field-effect transistor where a voltage applied to the gate terminal creates an electrical field that affects the conduction of electrons between the drain and the source. The important parameters of the NDB4050 are the gate-source voltage, the drain-source voltage, and the drain-source current.
The specific data is subject to PDF, and the above content is for reference
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