NDB4060 Discrete Semiconductor Products |
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Allicdata Part #: | NDB4060TR-ND |
Manufacturer Part#: |
NDB4060 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 60V 15A D2PAK |
More Detail: | N-Channel 60V 15A (Tc) 50W (Tc) Surface Mount D²PA... |
DataSheet: | NDB4060 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D²PAK (TO-263AB) |
Mounting Type: | Surface Mount |
Operating Temperature: | -65°C ~ 175°C (TJ) |
Power Dissipation (Max): | 50W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 450pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 17nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 100 mOhm @ 7.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 15A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The NDB4060 is a type of MOSFET, or metal–oxide–semiconductor field-effect transistor, which is a type of single-gate device. It is a three terminal device, with a drain, source, and gate. It is a type of insulated gate field effect transistor in which the gate is insulated from the channel by an oxide layer. It is a uni-directional device and is current-controlled rather than voltage-controlled and is more efficient than a bipolar transistor. The NDB4060 is a type of enhancement mode device, which is used in a wide range of applications, including circuit protection, amplifier circuits, switching applications, and noise suppression.
The NDB4060 is used as an enhancement mode MOSFET and is most often used for protection circuits, switching applications, or as an amplifier. Its main purpose is to block the flow of current from the drain to the source and to open the flow of current from the source to the drain when the gate-source voltage is applied. It is typically used in applications where a low gate-source voltage is required and where the power dissipated is relatively low.
When considering the working principle of the NDB4060, it is important to note that this type of device is a uni-directional device and is dependent on a voltage at the gate relative to the source. When the voltage at the gate is increased relative to the source, it increases the electric field in the channel. This increases the electric field and makes the electrons more easily mobile across the channel, which eventually leads to the current flowing from source to drain. When the gate voltage is decreased relative to the source, the electric field in the channel is decreased, which leads to the current being blocked. This is how the device is used to switch current flow on and off.
The NDB4060 is a widely used device in a variety of applications. It can be used in amplifier circuits where it can provide voltage gain; in noise suppression applications to reduce mechanical noise generated by system components; in power supplies as protection against over-currents; and in switching applications to control current flow between two or more points. It is also used extensively in motor control and speed control systems where high current can be rapidly switched.
In conclusion, the NDB4060 is a type of enhancement mode single-gate device, which is used in a wide range of applications. Its working principle is based on the application of a voltage at the gate relative to the source, which increases or decreases the electric field in the channel and enables current to flow between the source and the drain. It is an efficient device due to its high current carrying capability and low power consumption. It is used in various applications as an amplifier, protection circuit, noise suppressor, and switch, and is an indispensable part of many circuits.
The specific data is subject to PDF, and the above content is for reference
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