NDB4060L Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	2V @ 250µA
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	D²PAK (TO-263AB)
Mounting Type:	Surface Mount
Operating Temperature:	-65°C ~ 175°C (TJ)
Power Dissipation (Max):	50W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	600pF @ 25V
Vgs (Max):	±16V
Gate Charge (Qg) (Max) @ Vgs:	17nC @ 5V
Series:	--
Rds On (Max) @ Id, Vgs:	80 mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On):	5V, 10V
Current - Continuous Drain (Id) @ 25°C:	15A (Tc)
Drain to Source Voltage (Vdss):	60V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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The NDB4060L is a major type of MOSFET, that is able to effectively control current flow and voltage for devices dealing in high-frequency applications. This device is composed of a drain, source and gate, which control the flow of electrons, allowing for quick and precise control of devices like signal processors, power amplifiers and other applications.The NDB4060L MOSFET is a single channel Field Effect Transistor (FET). This device is composed of three main parts, the source, gate and drain. The source acts as a negative voltage to attract electrons, while the gate has a positive voltage to repel electrons. Electrons then move from the source and towards the drain. By providing different levels of gate voltage, the gate controls how many electrons flow through the device, thus controlling the amount of current and voltage going through the circuit.Unlike a normal transistor, the NDB4060L does not require a base contact, allowing for faster response times and lower power operation. In addition, it is able to effectively control current and voltage at frequencies far beyond the range of a normal transistor. This is due to its larger input capacitance and quick charge-discharge characteristics.The NDB4060L has many applications and is often used in high-frequency circuits, such as signal processors and power amplifiers. It can also be used in logic and switching circuits. Its fast response times and low power operation makes it particularly useful in these applications.The NDB4060L is also used in RF circuits, where it can be utilized in place of other switching transistors. Hestatin modulation and frequency synthesizers, radio frequency amplifier switch, antenna switch and arc gap switch are all applications where the NDB4060L is commonly used.Due to its wide application field, the NDB4060L is often used in power modules, switching power supplies and high-frequency DC-DC converters. It is also often used in mobile phones and other battery operated devices.In conclusion, the NDB4060L is an effective and versatile MOSFET device, offering quick response times, low power operation, and high-frequency capability. It is used in a variety of applications, ranging from signal processors and power amplifiers to RF and logic circuits. As a single channel FET, it is easily adaptable for different designs and provides a cost-effective solution for companies dealing with high-frequency applications.

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