NDB7050 Allicdata Electronics

NDB7050 Discrete Semiconductor Products

Allicdata Part #:

NDB7050TR-ND

Manufacturer Part#:

NDB7050

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 50V 75A D2PAK
More Detail: N-Channel 50V 75A (Tc) Surface Mount D²PAK (TO-26...
DataSheet: NDB7050 datasheetNDB7050 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 13 mOhm @ 40A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V
FET Feature: --
Mounting Type: Surface Mount
Supplier Device Package: D²PAK (TO-263AB)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

NDB7050 is a type of Insulated-Gate Bipolar Transistor (IGBT). An IGBT is a combination of a MOSFET and BJT and has some advantages over either one of them. NDB7050 is a high-voltage, high-performance, low-power IGBT.

The NDB7050 is used in applications such as renewable energy, motor control, and in power supplies. It is also used in power amplification and control circuits, such as power-factor correction, light dimming, and adjustable speed drives. It is also used in DC-DC converters and power supply with phase control.

The NDB7050 has many advantages that make it desirable for use in a variety of applications. It has a high current gains which makes it ideal for motor control and other high power applications. It has a low threshold voltage, meaning that it does not require a large gate voltage to turn on. It also has a high current carrying capacity and can handle currents of up to 30 amps in a single device.

The working principle of the NDB7050 is quite simple. It is a three-terminal device with a gate connected to a source, a drain, and a substrate. When a positive voltage is applied to the gate, it will cause an electric field to form between the gate and the source. This electric field will then attract electrons from the source to the gate and cause an electric current to flow between the source and the drain. This flow of electrons is called an avalanche injection.

The NDB7050 is a very reliable, efficient, and versatile IGBT that is well suited for a variety of power supply and motor control applications. It is easy to use and understand and its advantages make it very attractive from a cost and performance standpoint. As a result, its uses in numerous applications will continue to grow.

The specific data is subject to PDF, and the above content is for reference

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