| Allicdata Part #: | NDB7051-ND |
| Manufacturer Part#: |
NDB7051 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 50V 70A D2PAK |
| More Detail: | N-Channel 50V 70A (Tc) 130W (Tc) Surface Mount D²P... |
| DataSheet: |  NDB7051 Datasheet/PDF |
| Quantity: | 1000 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package: | D²PAK (TO-263AB) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -65°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 130W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1930pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 100nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 13 mOhm @ 35A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 70A (Tc) |
| Drain to Source Voltage (Vdss): | 50V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
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The NDB7051 is a surface-mount, N-channel Field Effect Transistor (FET) designed for use in high-power, high-current applications with a drain current of up to 70 amps and voltage ratings as high as 100 volts. It is a specifically designed for use in high power DC-DC converters, high current switching applications, power inverters and DC motor control applications.
The NDB7051 is characterized by its high power dissipation in a compact package and its high current and voltage ratings. It is well-suited to applications requiring high peak current and voltage handling.
The NDB7051 is a lateral Diffused Metal Oxide Semiconductor (DMOS) device, which means that a very thin layer of a metal oxide material is used as an insulating layer on the substrate. This allows the DMOS device to have a reduced RDSon and a low parasitic capacitance. This results in an improved switching performance and a reduction in power losses.
The NDB7051 consists of an N-type enhancement-mode MOSFET, which is formed by a silicon-oxide interface between a silicon substrate and a layer of heavily doped n-type dopant. The NDB7051 is constructed in such a way that it provides low RDSon, high input impedance and good electrical isolation between the gate electrode and the source electrode.
The working principle of the NDB7051 is quite simple. When a positive voltage is applied to the gate, the MOSFET channel is opened, allowing current to flow from the drain to the source. When the gate voltage is taken to zero, the channel is closed and no current can flow. The NDB7051 can also be used for applications that require both P and N-channel FETs, since it can be used to switch both polarities.
The NDB7051 is mainly used in high-power, high-current applications like DC-DC converters, switch mode power supplies, motor control applications, and power inverters. It is also used in various industrial applications that require a high current, high voltage switch. It is also suitable for use in high-end consumer applications like notebook computers, gaming systems, and other power-hungry portable devices.
The NDB7051 is a popular choice for high-power, high-current applications. It offers strong performance, high temperature capability and excellent reliability. It is also designed to work in harsh environments, making it suitable for use in a wide range of applications. In addition to its low RDSon, low gate charge, it also offers the advantages of ease of mounting and excellent scalability, making it a popular choice for high-power, high-current applications. The NDB7051 is a reliable, cost-effective solution for applications that require high peak power and high current.
The specific data is subject to PDF, and the above content is for reference
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