NDB7060L Discrete Semiconductor Products |
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Allicdata Part #: | NDB7060LTR-ND |
Manufacturer Part#: |
NDB7060L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 60V 75A D2PAK |
More Detail: | N-Channel 60V 75A (Tc) Surface Mount D²PAK (TO-26... |
DataSheet: | NDB7060L Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 60V |
Current - Continuous Drain (Id) @ 25°C: | 75A (Tc) |
Rds On (Max) @ Id, Vgs: | 15 mOhm @ 37.5A, 5V |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 115nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds: | 4000pF @ 25V |
FET Feature: | -- |
Mounting Type: | Surface Mount |
Supplier Device Package: | D²PAK (TO-263AB) |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The NDB7060L is a single device of a type of transistor, known as a field-effect transistor (FET). FETs come in two general types, the more common junction gate FET (JFET) and the insulated gate FET (IGFET), which is also called a metal-oxide-semiconductor field-effect transistor (MOSFET). The NDB7060L is a MOSFET, which is a type of IGFET.
A MOSFET is a type of transistor that uses a channel of n-type or p-type material as its conducting element. The transistor is operated by controlling the electric field at the gate, which can be used to either open or close the conducting channel. This makes the MOSFET ideal for use in a wide range of applications, as it can be used as either a switch or an amplifier.
One of the most popular applications of the NDB7060L is high frequency switching. This is because of the transistor\'s low operating voltage and low power consumption. It is also able to handle high frequencies without experiencing any noise or distortion. It is designed to operate between -40 and 125 degrees Celsius and offers protection against overvoltage and overcurrent.
The NDB7060L also finds use in other applications such as power supplies, remote sensing, digital-to-analog conversion, and line driving. It is also widely used in switching circuits for high-resolution displays, digital video camcorders, and video game consoles.
The working principle of the NDB7060L MOSFET is quite straightforward. When a voltage is applied to the gate, it creates an electric field that attracts mobile electrons from the semiconductor substrate. This creates a conductive n-type channel between the source and drain, allowing current to flow from one terminal to the other. When a gate voltage is applied, this channel is opened or closed depending on the voltage applied, allowing the current to be regulated.
The NDB7060L MOSFET is an affordable and reliable device, with many applications. The low operating voltage and low power consumption make it ideal for high frequency switching, while its other applications include power supplies, remote sensing, digital-to-analog conversion, and line driving. Its working principle is based on the electric field generated by a voltage applied to the gate, which is used to open or close the conducting channel and control the current flow.
The specific data is subject to PDF, and the above content is for reference
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