NDH8436 Discrete Semiconductor Products

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The NDH8436 is a single N-channel, low power dissipation field effect transistor (FET) device. The device is part of a series of low power devices from the N-FET family. It is designed for use in power control applications in consumer electronics, automotive, and industrial markets. The NDH8436 has a maximum power dissipation of only 9 watts.

The NDH8436 is a general purpose FET with a threshold voltage of 5 volts. This allows the device to be used in basic applications such as switching, voltage control and signal conditioning. Its low power dissipation makes it particularly suitable for low power applications in consumer electronics.

The working principle of the NDH8436 is based on the N-type FET (FET), which is a field effect transistor that uses an electric gate to modify the conductivity of an N-type semiconductor channel. The channel’s conductivity can be manipulated by controlling the gate voltage in order to allow or block the flow of current between drain and source terminals. As the gate voltage increases, the channel “opens”, allowing for higher current flow, and as the voltage decreases, the channel “closes”, blocking current flow.

The NDH8436 uses an electrostatic field to control the source-drain current when the gate voltage is set. Operating temperatures of the device range from -55 °C to 175 °C and its current-carrying capacity is maintained at low temperatures. This FET is also rated for an average power on state drain current of -30 mA, while the static on-state drain to source resistance is rated at 3.6 ohms.

The NDH8436 is an ideal device for use in low-power switching applications such as lamp regulation, motor speed control, battery chargers and interfacing circuits. It is used in modern applications including power control, voltage regulation, and lighting control.

In summary, the NDH8436 single N-channel, low power dissipation FET is a highly efficient and reliable component for use in switching and voltage control applications. It has a threshold voltage of 5 volts and a maximum power dissipation of 9 watts. The device is rated for an average power on state drain current of -30 mA and its static on-state drain-to-source resistance is rated at 3.6 ohms. The working principle of the device is based on the principle of an N-type FET, which uses an electric gate to control the conductivity of the semiconductor channel. It offers wide operating temperature range, making it suitable for use in a wide variety of applications, such as power control, voltage regulation, and lighting control.

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