NDH8447 Discrete Semiconductor Products

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The NDH8447 is a transistor with a field effect structure. As a monolithic single vertical MOSFET, it is mainly applied to high-temperature and low-cost electronic applications. It is a power transistor that is fabricated with dielectric isolation and multi-epitaxial layers structure. This device has very low output capacitance and thermal resistance and provides excellent saturation characteristics and a wide operating range. This makes it suitable to be employed in a variety of electronic circuits and applications, including power switch, power amplifier, high-voltage current limiter and other power devices. In addition, NDH8447 can operate at extreme temperatures up to 175 degree centigrade.

The basic working principle of NDH8447 is based on the diode-like structure and the metal-oxide-semiconductor (MOS) structure. This device consists of a p-n junction, a gate oxide layer, a channel and a metal oxide semiconductor layer. When a current is applied to the p-n junction, it causes the channel to be filled with majority carriers and creates a conductive channel across the gate oxide layer. As a result, a majority carriers path is formed and is available for conduction in the device. The amount of this conduction current is determined by the amount of voltage applied to the gate oxide layer.

The NDH8447 is composed of a vertical double diffused, C-shaped, planar type MOSFET structure. This double diffused structure, which has an insulation layer between a drain and a source, provides enhanced current capacity, small thermal resistance and a low on-resistance. The gate oxide provides a larger area for controlling current flows and therefore increases the available power to the circuitry. This also allows for efficient switching of high voltages and currents with fewer saturation losses. Furthermore, the C-shaped planar structure provides the device with a good thermal performance due to its improved resistance to thermal stress.

When operated in the linear region, the NDH8447 has a positive temperature coefficient, which is ideal for high-temperature environments. This ensures that the device is able to maintain a reliable output current even when the temperatures fluctuate significantly. This device also exhibits an extremely low drain-source on-resistance of 2.5Ω, making it very power-efficient.

The NDH8447 is also known for its reliable and robust design, offering excellent protection against electrostatic discharge (ESD) and voltage transient protection. This helps to extend the life of the device. The main application areas for this device include mobile devices, embedded systems, power transmissions and automotive electrical applications. It is also suitable for a wide range of applications in the fields of communication, avionics, power management and medical instrumentation.

Overall, the NDH8447 has a wide range of advantages that make it suitable for a variety of power control applications. It has a low thermal resistance and on-resistance, a wide operating temperature range and excellent protection against ESD and voltage transients. The device is well-suited to serve as a power switch, power amplifier and high-voltage current limiter. In addition, its reliable and robust design makes it suitable for applications in the field of mobile devices, embedded systems, automotive and power management.

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