| Allicdata Part #: | NDP6030PL-ND |
| Manufacturer Part#: |
NDP6030PL |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET P-CH 30V 30A TO-220 |
| More Detail: | P-Channel 30V 30A (Tc) 75W (Tc) Through Hole TO-22... |
| DataSheet: |  NDP6030PL Datasheet/PDF |
| Quantity: | 1000 |
| Vgs(th) (Max) @ Id: | 2V @ 250µA |
| Package / Case: | TO-220-3 |
| Supplier Device Package: | TO-220 |
| Mounting Type: | Through Hole |
| Operating Temperature: | -65°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 75W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1570pF @ 15V |
| Vgs (Max): | ±16V |
| Gate Charge (Qg) (Max) @ Vgs: | 36nC @ 5V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 25 mOhm @ 19A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 30A (Tc) |
| Drain to Source Voltage (Vdss): | 30V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | P-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
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The NDP6030PL is a power field-effect transistor (FET) which offers excellent performance in a variety of applications ranging from motor control and drive systems to power conversion and inverters. This device is made up of P-channel vertical DMOS transistor, which consists of an epitaxial source and drain layer connected to a gate by a metal gate structure. The device features low on-resistance, low gate charge and low threshold voltage. It is supplied in a TO-220 package.
The NDP6030PL is designed for operation at higher frequencies, with a higher drain current capability, and a lower RDS(on) than regular MOSFETs. It offers a wide range of applications, including motor control and drive systems, rectification, DC-DC converters, and inverters, among others. The device also features a wide input voltage range which allows for safe operation in applications where high voltage transients are possible.
The working principle of the NDP6030PL is based on the characteristic of the MOSFET. This transistor has a source, drain and gate terminal which, when connected properly, allow current to flow between them. The source and drain are separated by a channel, which is controlled by the gate. When a voltage is applied to the gate, the channel is narrowed, thus reducing the resistance and allowing current to flow. The greater the voltage applied to the gate, the lower the resistance between source and drain.
The NDP6030PL is a great choice for a variety of applications such as motor control, drive systems, and higher-power applications. It offers excellent performance, lower on-resistance, and a wide input voltage range for safer operation. It is suitable for use in high-power systems due to its high thermal stability, allowing for use in environments where heat dissipation is an issue.
The specific data is subject to PDF, and the above content is for reference
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