NDP6060L Allicdata Electronics
Allicdata Part #:

NDP6060L-ND

Manufacturer Part#:

NDP6060L

Price: $ 1.96
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 60V 48A TO-220AB
More Detail: N-Channel 60V 48A (Tc) 100W (Tc) Through Hole TO-2...
DataSheet: NDP6060L datasheetNDP6060L Datasheet/PDF
Quantity: 3166
1 +: $ 1.78290
10 +: $ 1.60965
100 +: $ 1.29352
500 +: $ 1.00606
1000 +: $ 0.83359
Stock 3166Can Ship Immediately
$ 1.96
Specifications
Series: --
Packaging: Tube 
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Rds On (Max) @ Id, Vgs: 20 mOhm @ 24A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 5V
Vgs (Max): ±16V
Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 25V
FET Feature: --
Power Dissipation (Max): 100W (Tc)
Operating Temperature: -65°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220
Package / Case: TO-220-3
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The NDP6060L is an Advanced Power MOSFET device which combines the latest in advanced vertical power MOSFET technology and advanced circuit design techniques. This device is designed to provide high performance, low gate charge and fast switching speed in high frequency applications. It can be used in a variety of applications in which current must be controlled, such as DC-DC converters, solid-state relays, Class-D power amplifiers, motor controllers and high-efficiency switching regulators.

The NDP6060L features a MOSFET with a maximum drain current rating of 60A and a maximum RDS(on) of 0.007 Ω. It operates with a drain-source voltage of up to 100V, a gate-source voltage of up to ±20V, and a junction temperature of up to 175°. It also has a rugged and reliable package, which offers protection against mechanical and thermally induced stresses.

The working principle of the NDP6060L is based on the use of electrical fields to control the movement of charge carriers (MOSFETs employs a field-effect principle). The NDP6060L is a n-channel power MOSFET consisting of n-type drain and source regions, separated by a highly-doped p–type body region. The body region is also connected to the gate of the MOSFET, so when an electrical field is created between the drain and source regions, it affects the body region, controlling the movement of charge carriers (electrons and holes) between the drain and source. Therefore, by controlling the voltage on the gate, the current between the source and drain can be controlled.

The NDP6060L is most commonly used in DC-DC converter applications. It can be used in buck, boost and buck-boost configurations. It can also be used in synchronous rectification applications, where it is used to control the current flow from the drain to the source. It is also used in motor controllers, solid-state relays, Class-D power amplifiers, and high-efficiency switching regulators.

The NDP6060L is designed to provide high performance, low gate charge and fast switching speed in high frequency applications. Its versatile design enables it to be used in a number of applications including DC-DC convertors, motor controllers, solid-state relays, Class-D power amplifiers, and high-efficiency switching regulators.

The NDP6060L offers superior performance over traditional MOSFETs due to its higher current rating and lower on-resistance. This enables it to deliver more power at a given frequency and temperature, which makes it suitable for a wider range of applications. In addition, its rugged and reliable package provides enhanced protection against mechanical and thermally induced stresses.

In conclusion, the NDP6060L is an advanced power MOSFET device which combines the latest in advanced vertical power MOSFET technology and advanced circuit design techniques. Its versatility, high performance, low gate charge and fast switching speed make it an ideal choice for high frequency applications such as DC-DC converters, motor controllers, solid-state relays, Class-D power amplifiers, and high-efficiency switching regulators.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "NDP6" Included word is 5
Part Number Manufacturer Price Quantity Description
NDP603AL ON Semicondu... -- 1000 MOSFET N-CH 30V 25A TO-22...
NDP6030PL ON Semicondu... -- 1000 MOSFET P-CH 30V 30A TO-22...
NDP6060 ON Semicondu... -- 2606 MOSFET N-CH 60V 48A TO-22...
NDP6020P ON Semicondu... 1.45 $ 9509 MOSFET P-CH 20V 24A TO-22...
NDP6060L ON Semicondu... 1.96 $ 3166 MOSFET N-CH 60V 48A TO-22...
Latest Products
IRFL31N20D

MOSFET N-CH 200V 31A D2PAKN-Channel 200V...

IRFL31N20D Allicdata Electronics
IXTT440N055T2

MOSFET N-CH 55V 440A TO-268N-Channel 55V...

IXTT440N055T2 Allicdata Electronics
IXTH14N80

MOSFET N-CH 800V 14A TO-247N-Channel 800...

IXTH14N80 Allicdata Electronics
IXFT23N60Q

MOSFET N-CH 600V 23A TO-268(D3)N-Channel...

IXFT23N60Q Allicdata Electronics
IXTT72N20

MOSFET N-CH 200V 72A TO-268N-Channel 200...

IXTT72N20 Allicdata Electronics
IXFT9N80Q

MOSFET N-CH 800V 9A TO-268N-Channel 800V...

IXFT9N80Q Allicdata Electronics