Allicdata Part #: | NDP6060L-ND |
Manufacturer Part#: |
NDP6060L |
Price: | $ 1.96 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 60V 48A TO-220AB |
More Detail: | N-Channel 60V 48A (Tc) 100W (Tc) Through Hole TO-2... |
DataSheet: | NDP6060L Datasheet/PDF |
Quantity: | 3166 |
1 +: | $ 1.78290 |
10 +: | $ 1.60965 |
100 +: | $ 1.29352 |
500 +: | $ 1.00606 |
1000 +: | $ 0.83359 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 60V |
Current - Continuous Drain (Id) @ 25°C: | 48A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 5V, 10V |
Rds On (Max) @ Id, Vgs: | 20 mOhm @ 24A, 10V |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 60nC @ 5V |
Vgs (Max): | ±16V |
Input Capacitance (Ciss) (Max) @ Vds: | 2000pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 100W (Tc) |
Operating Temperature: | -65°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220 |
Package / Case: | TO-220-3 |
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The NDP6060L is an Advanced Power MOSFET device which combines the latest in advanced vertical power MOSFET technology and advanced circuit design techniques. This device is designed to provide high performance, low gate charge and fast switching speed in high frequency applications. It can be used in a variety of applications in which current must be controlled, such as DC-DC converters, solid-state relays, Class-D power amplifiers, motor controllers and high-efficiency switching regulators.
The NDP6060L features a MOSFET with a maximum drain current rating of 60A and a maximum RDS(on) of 0.007 Ω. It operates with a drain-source voltage of up to 100V, a gate-source voltage of up to ±20V, and a junction temperature of up to 175°. It also has a rugged and reliable package, which offers protection against mechanical and thermally induced stresses.
The working principle of the NDP6060L is based on the use of electrical fields to control the movement of charge carriers (MOSFETs employs a field-effect principle). The NDP6060L is a n-channel power MOSFET consisting of n-type drain and source regions, separated by a highly-doped p–type body region. The body region is also connected to the gate of the MOSFET, so when an electrical field is created between the drain and source regions, it affects the body region, controlling the movement of charge carriers (electrons and holes) between the drain and source. Therefore, by controlling the voltage on the gate, the current between the source and drain can be controlled.
The NDP6060L is most commonly used in DC-DC converter applications. It can be used in buck, boost and buck-boost configurations. It can also be used in synchronous rectification applications, where it is used to control the current flow from the drain to the source. It is also used in motor controllers, solid-state relays, Class-D power amplifiers, and high-efficiency switching regulators.
The NDP6060L is designed to provide high performance, low gate charge and fast switching speed in high frequency applications. Its versatile design enables it to be used in a number of applications including DC-DC convertors, motor controllers, solid-state relays, Class-D power amplifiers, and high-efficiency switching regulators.
The NDP6060L offers superior performance over traditional MOSFETs due to its higher current rating and lower on-resistance. This enables it to deliver more power at a given frequency and temperature, which makes it suitable for a wider range of applications. In addition, its rugged and reliable package provides enhanced protection against mechanical and thermally induced stresses.
In conclusion, the NDP6060L is an advanced power MOSFET device which combines the latest in advanced vertical power MOSFET technology and advanced circuit design techniques. Its versatility, high performance, low gate charge and fast switching speed make it an ideal choice for high frequency applications such as DC-DC converters, motor controllers, solid-state relays, Class-D power amplifiers, and high-efficiency switching regulators.
The specific data is subject to PDF, and the above content is for reference
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