Allicdata Part #: | NDP6060-ND |
Manufacturer Part#: |
NDP6060 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 60V 48A TO-220AB |
More Detail: | N-Channel 60V 48A (Tc) 100W (Tc) Through Hole TO-2... |
DataSheet: | NDP6060 Datasheet/PDF |
Quantity: | 2606 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220 |
Mounting Type: | Through Hole |
Operating Temperature: | -65°C ~ 175°C (TJ) |
Power Dissipation (Max): | 100W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1800pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 70nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 25 mOhm @ 24A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 48A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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NDP6060 is a depletion-mode transistor designed for critical applications where reliability and temperature performance are paramount. It is a single-sided P-channel depletion-mode MOSFET with improved low-noise, low-temperature performance, making it an ideal solution for applications in audio, digital, RF, and power-supply design.
The NDP6060 has a maximum continuous drain-source voltage (VDS) of 20V and a maximum drain current (ID) of 2A. The low-noise, low-temperature performance makes the NDP6060 an ideal solution for high-quality audio applications. It has an exceptionally low noise level of 250nV/√hz, making it suitable for dynamic range and signal-to-noise ratio (SNR) applications.
The NDP6060 also offers improved reliability and low-temperature performance — with very low capacitance and high Tjmax of 150°C. This makes the NDP6060 suitable for applications such as RF amplifiers, RF switches, and digital logic applications.
The working principle of the NDP6060 MOSFET is similar to that of any other MOSFET. It consists of a source, gate, and drain, which are connected via a semiconductor channel between source and drain. The gate terminal is separated from the channel by an insulated gate dielectric, usually silicon dioxide (SiO2). By applying a positive voltage to the gate, the channel electrons are attracted and a thin inversion layer is formed near the interface of gate and channel. This reduces the resistance between source and drain, allowing current to flow through the transistor.
The NDP6060 also has enhanced features to enhance its performance, such as an on-resistance of 2Ω, ultra-low gate-to-source capacitance of 0.2pF, and a threshold voltage which allows it to switch on and off faster. This helps to increase its power efficiency, reduce power consumption, and increase the speed of the applications.
The NDP6060 is an advanced transistor designed for critical applications. With its low-noise and low-temperature performance, it is an ideal solution for audio, digital, RF, and power-supply designs. It has improved reliability and high temperature performance, making it a suitable choice for applications such as RF amplifiers, RF switches, and digital logic applications.
The specific data is subject to PDF, and the above content is for reference
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