NDP7060 Allicdata Electronics
Allicdata Part #:

NDP7060-ND

Manufacturer Part#:

NDP7060

Price: $ 2.98
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 60V 75A TO-220AB
More Detail: N-Channel 60V 75A (Tc) 150W (Tc) Through Hole TO-2...
DataSheet: NDP7060 datasheetNDP7060 Datasheet/PDF
Quantity: 965
1 +: $ 2.70900
10 +: $ 2.41605
100 +: $ 1.98129
800 +: $ 1.44973
1600 +: $ 1.35308
Stock 965Can Ship Immediately
$ 2.98
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-220-3
Supplier Device Package: TO-220
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Power Dissipation (Max): 150W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 13 mOhm @ 40A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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NDP7060 Application Field and Working Principle

NDP7060 is a type of MOSFET (Metal Oxide Semiconductor Field Effect Transistor) which is a three-terminal semiconductor device. It has very high electrical current and temperature ratings, making it one of the most useful components of a wide range of power circuit designs. This type of device is most commonly used to control very high power, both AC and DC currents. In addition, this mosfet is also popularly used to construct varied types of sine wave, single phase and three-phase amplifiers.

MOSFET devices are designed to conduct an electrical current between source and drain. The control element of a MOSFET is a gate that separates the source and drain terminals. Gate is used to control the current between source and drain. When a voltage is applied at the gate, it lowers the resistance of the MOSFET channel, allowing current to flow. The channel’s width is also controlling with the gate voltage, enabling the current control of the gated transistor.

The NDP7060 is a N-Channel enhancement type power MOSFET, offering a wide range of current and power ratings. It is made using advanced integrated circuit (IC) technology. It has an on-state resistance of 0.68 ohm at a gate voltage of 6V and a 3.2A drain current. Its Drain-Source Breakdown Voltage (V_DSS) is 70V and its Total Gate Charge (Q_G) is 13nC. It also has a low on-state voltage drop, low gate drive power, and long conduction time.

The NDP7060 is widely used in many different applications, such as solid-state relays, power supply systems, DC-DC converters, automotive lighting systems, lamps, power-on reset circuits, and industrial automation systems. It is used in the protection of DC motors and their controllers, as well as in current limitation circuitry, and for various switching applications. It is also used for electronic load switching and for the protection of rectifier bridge.

Thus, it can be understood that the NDP7060 is a powerful and versatile MOSFET device, as can be seen from its current and temperature ratings. It is suitable for a variety of applications, as variances in its design parameters permit appropriate configuration for any kind of load, regardless of its shape and size. Its reliability and long-term performance are among its remarkable features.

The specific data is subject to PDF, and the above content is for reference

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